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PDF DS9610B Data sheet ( Hoja de datos )
| Número de pieza | DS9610B | |
| Descripción | High Voltage Synchronous Rectified Buck MOSFET Driver | |
| Fabricantes | Richtek | |
| Logotipo |  |
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®
RT9610B
High Voltage Synchronous Rectified Buck MOSFET Driver
for Notebook Computer
General Description
The RT9610B is a high frequency, dual MOSFET driver
specifically designed to drive two power N-MOSFETS in
a synchronous-rectified buck converter topology. It is
especially suited for mobile computing applications that
require high efficiency and excellent thermal performance.
This driver, combined with Richtek's series of multi-phase
Buck PWM controllers, provides a complete core voltage
regulator solution for advanced microprocessors.
The drivers are capable of driving a 3nF load with fast
rising/falling time and fast propagation delay. This device
implements bootstrapping on the upper gates with only a
single external capacitor. This reduces implementation
complexity and allows the use of higher performance, cost
effective, N-MOSFETs. Adaptive shoot through protection
is integrated to prevent both MOSFETs from conducting
simultaneously. The RT9610B is available in WDFN-8L
2x2 package.
Features
Drives Two N-MOSFETs
Adaptive Shoot-Through Protection
0.5Ω On-Resistance, 4A Sink Current Capability
Supports High Switching Frequency
Tri-State PWM Input for Power Stage Shutdown
Output Disable Function
Integrated Boost Switch
Low Bias Supply Current
VCC POR Feature Integrated
Small 8-Lead WDFN Package
RoHS Compliant and Halogen Free
Applications
Core Voltage Supplies for Intel® / AMD® Mobile
Microprocessors
High Frequency Low Profile DC/DC Converters
High Current Low Output Voltage DC/DC Converters
High Input Voltage DC/DC Converters
Ordering Information
RT9610B
Package Type
QW : WDFN-8L 2x2 (W-Type)
Lead Plating System
G : Green (Halogen Free and Pb Free)
Note :
Richtek products are :
RoHS compliant and compatible with the current require-
ments of IPC/JEDEC J-STD-020.
Suitable for use in SnPb or Pb-free soldering processes.
Pin Configuration
(TOP VIEW)
EN 1
PHASE 2
UGATE 3
BOOT 4
8 VCC
7 LGATE
6 GND
9 5 PWM
WDFN-8L 2x2
Marking Information
20W
20 : Product Code
W : Date Code
Copyright ©2016 Richtek Technology Corporation. All rights reserved.
DS9610B-07 August 2016
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
1
1 page  
Parameter
Internal BOOT Switch
Internal Boost Switch On
Resistance
PWM Input
Symbol
RBOOT
Input Current
IPWM
PWM Tri-State Rising Threshold
PWM Tri-State Falling Threshold
Tri-State Shutdown Hold-off Time
EN Input
VPWMH
VPWML
tSHD_Tri
EN Input Voltage
Switching Time
Logic-High VENH
Logic-Low VENL
UGATE Rise Time
UGATE Fall Time
LGATE Rise Time
LGATE Fall Time
UGATE Turn-Off Propagation
Delay
LGATE Turn-Off Propagation
Delay
UGATE Turn-On Propagation
Delay
LGATE Turn-On Propagation
Delay
UGATE/LGATE Tri-State
Propagation Delay
Output
tUGATEr
tUGATEf
tLGATEr
tLGATEf
tPDLU
tPDLL
tPDHU
tPDHL
tPTS
UGATE Driver Source
Resistance
RUGATEsr
UGATE Driver Source Current
UGATE Driver Sink Resistance
IUGATEsr
RUGATEsk
UGATE Driver Sink Current
LGATE Driver Source
Resistance
IUGATEsk
RLGATEsr
LGATE Driver Source Current ILGATEsr
LGATE Driver Sink Resistance
LGATE Driver Sink Current
RLGATEsk
ILGATEsk
Test Conditions
VCC to BOOT, 10mA
VPWM = 5V
VPWM = 0V
VCC = 5V
VCC = 5V
VCC = 5V
VCC = 5V
VCC = 5V
VCC = 5V, 3nF Load
VCC = 5V, 3nF Load
VCC = 5V, 3nF Load
VCC = 5V, 3nF Load
VCC = 5V, Outputs Unloaded
VCC = 5V, Outputs Unloaded
VCC = 5V, Outputs Unloaded
VCC = 5V, Outputs Unloaded
VCC = 5V, Outputs Unloaded
100mA Source Current
VUGATE VPHASE = 2.5V
100mA Sink Current
VUGATE VPHASE = 2.5V
100mA Source Current
VLGATE = 2.5V
100mA Sink Current
VLGATE = 2.5V
RT9610B
Min Typ Max Unit
-- -- 80
-- 174 --
-- 174 --
3.5 3.8 4.1
0.7 1 1.3
100 175 250
A
V
V
ns
2 -- --
V
-- -- 0.48
-- 8 -- ns
-- 8 -- ns
-- 8 -- ns
-- 4 -- ns
-- 35 -- ns
-- 35 -- ns
-- 20 -- ns
-- 20 -- ns
-- 35 -- ns
-- 1 --
-- 2 --
-- 1 --
-- 2 --
-- 1 --
-- 2 --
-- 0.5 --
-- 4 --
A
A
A
A
Copyright ©2016 Richtek Technology Corporation. All rights reserved.
DS9610B-07 August 2016
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
5
5 Page 
Thermal Considerations
The junction temperature should never exceed the
absolute maximum junction temperature TJ(MAX), listed
under Absolute Maximum Ratings, to avoid permanent
damage to the device. The maximum allowable power
dissipation depends on the thermal resistance of the IC
package, the PCB layout, the rate of surrounding airflow,
and the difference between the junction and ambient
temperatures. The maximum power dissipation can be
calculated using the following formula :
PD(MAX) = (TJ(MAX) − TA) / θJA
where TJ(MAX) is the maximum junction temperature, TAis
the ambient temperature, and θJA is the junction-to-ambient
thermal resistance.
For continuous operation, the maximum operating junction
temperature indicated under Recommended Operating
Conditions is 125°C. The junction-to-ambient thermal
resistance, θJA, is highly package dependent. For a
WDFN-8L 2x2 package, the thermal resistance, θJA, is
120°C/W on a standard JEDEC 51-7 high effective-thermal-
conductivity four-layer test board. The maximum power
dissipation at TA = 25°C can be calculated as below :
PD(MAX) = (125°C − 25°C) / (120°C/W) = 0.833W for a
WDFN-8L 2X2 package
The maximum power dissipation depends on the operating
ambient temperature for the fixed TJ(MAX) and the thermal
resistance, θJA. The derating curves in Figure 3 allows
the designer to see the effect of rising ambient temperature
on the maximum power dissipation.
RT9610B
0.9
Four-Layer PCB
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25 50 75 100
Ambient Temperature (°C)
125
Figure 3. Derating Curve of Maximum Power Dissipation
Layout Considerations
Figure 4 shows the schematic circuit of a synchronous
buck converter to implement the RT9610B.
L1
VIN
12V
C1
VCORE
C3
Q1
L2
Q2
C2 1
CB BOOT VCC 5
RT9610B
8 UGATE
7 PHASE
PHB83N03LT
2
PWM
6
EN
PHB95N03LT 4 LGATE GND 3
5V
R1
C4
PWM
5V
Figure 4. Synchronous Buck Converter Circuit
When layout the PCB, it should be very careful. The power
circuit section is the most critical one. If not configured
properly, it will generate a large amount of EMI. The
junction of Q1, Q2, L2 should be very close.
Next, the trace from UGATE, and LGATE should also be
short to decrease the noise of the driver output signals.
PHASE signals from the junction of the power MOSFET,
carrying the large gate drive current pulses, should be as
heavy as the gate drive trace. The bypass capacitor C4
should be connected to GND directly. Furthermore, the
bootstrap capacitors (CB) should always be placed as close
to the pins of the IC as possible.
Copyright ©2016 Richtek Technology Corporation. All rights reserved.
DS9610B-07 August 2016
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet DS9610B.PDF ] | |
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