STB8N65M5 Datasheet PDF - STMicroelectronics
Part Number | STB8N65M5 | |
Description | Power MOSFETs | |
Manufacturers | STMicroelectronics | |
Logo | ||
There is a preview and STB8N65M5 download ( pdf file ) link at the bottom of this page. Total 26 Pages |
Preview 1 page No Preview Available ! STB8N65M5, STD8N65M5, STF8N65M5,
STI8N65M5, STP8N65M5, STU8N65M5
N-channel 650 V, 0.56 Ω typ., 7 A MDmesh™ V Power MOSFET
in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK packages
Datasheet — production data
Features
Type
STB8N65M5
STD8N65M5
STF8N65M5
STI8N65M5
STP8N65M5
STU8N65M5
VDSS @ RDS(on)
TJmax max.
ID
710 V < 0.6 Ω 7 A
PTOT
70 W
70 W
25 W
70 W
70 W
70 W
■ Worldwide best RDS(on) * area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
Applications
■ Switching applications
3
2
1
TO-220FP
TAB
3
1
DPAK
TAB
3
2
1
TO-220
TAB
123
I²PAK
TAB
3
1
D²PAK
TAB
IPAK
3
2
1
Figure 1. Internal schematic diagram
$ 4!"
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
'
3
!-V
Table 1. Device summary
Order codes Marking Package Packaging
STB8N65M5
STD8N65M5
STF8N65M5
STI8N65M5
STP8N65M5
STU8N65M5
8N65M5
D²PAK
DPAK
TO-220FP
I²PAK
TO-220
IPAK
Tape and reel
Tape and reel
Tube
Tube
Tube
Tube
October 2012
This is information on a product in full production.
Doc ID 16531 Rev 5
1/26
www.st.com
26
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STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(off)
tr(V)
tc(off)
tf(i)
Turn-off delay time
Rise time
Cross time
Fall time
Test conditions
VDD = 400 V, ID = 4A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20)
(see Figure 23)
Min. Typ. Max. Unit
50 ns
14 ns
--
20 ns
11 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 7 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
7A
-
28 A
- 1.5 V
200
- 1.6
16
ns
µC
A
263
- 1.9
15
ns
µC
A
Doc ID 16531 Rev 5
5/26
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STB8N65M5 electronic component. |
Information | Total 26 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ STB8N65M5.PDF Datasheet ] |
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