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PDF BD107 Data sheet ( Hoja de datos )
| Número de pieza | BD107 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BD107 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD107
DESCRIPTION
·Continuous Collector Current -IC= 2.5A
·Power Dissipation-PD=12W @TC= 25℃
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for driver and output stages and high
power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
65 V
VCEO
Collector-Emitter Voltage
65 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
2.5 A
PC Collector Power Dissipation@TC=25℃ 12
W
TJ Junction Temperature
-55~175 ℃
Tstg Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
13 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BD107.PDF ] | |
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