(PDF) 2SD1802 Datasheet - Silicon NPN Power Transistor

Número de pieza	2SD1802
Descripción	Silicon NPN Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1802 DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making it easy to make2SD1802/ 2SB1202-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range 6A 15 W 1.0 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF 2SD1802 Data sheet ( Hoja de datos )