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PDF STS14N3LLH5 Data sheet ( Hoja de datos )
| Número de pieza | STS14N3LLH5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STS14N3LLH5
N-channel 30 V, 0.005 Ω, 14 A, SO-8
STripFET™ V Power MOSFET
Features
Type
VDSS
RDS(on)
ID
STS14N3LLH5
30 V
<0.006 Ω 14 A (1)
)1. The value is rated according Rthj-pcb
t(s■ RDS(on) * Qg industry benchmark
uc■ Extremely low on-resistance RDS(on)
d■ Very low switching gate charge
ro■ High avalanche ruggedness
P■ Low gate drive power losses
oleteApplication
bs■ Switching applications
- ODescription
t(s)This product utilizes the 5th generation of design
crules of ST’s proprietary STripFET™ technology.
uThe lowest available RDS(on)*Qg, in SO-8
dpackage, makes this device suitable for the most
rodemanding DC-DC converter applications, where
Obsolete Phigh power density is to be achieved.
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STS14N3LLH5
Marking
14D3L
Package
SO-8
Packaging
Tape and reel
November 2009
Doc ID 14166 Rev 4
1/12
www.st.com
12
1 page  
STS14N3LLH5
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=15 V, ID= 7 A,
RG=4.7 Ω, VGS =10 V
(see Figure 13)
Min. Typ. Max. Unit
9.3
14.5
--
22.7
4.5
ns
ns
ns
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
t(s)ISD Source-drain current
cISDM(1) Source-drain current (pulsed)
roduVSD(2) Forward on voltage
ISD = 14 A, VGS=0
Ptrr
teQrr
leIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 14 A,
di/dt = 100 A/µs,
VDD= 25 V, Tj=150 °C
o1. Pulse width limited by safe operating area
Obsolete Product(s) - Obs2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
- 14 A
- 56 A
- 1.1 V
25
- 17.5
1.4
ns
nC
A
Doc ID 14166 Rev 4
5/12
5 Page 
STS14N3LLH5
5 Revision history
Revision history
Table 9. Document revision history
Date
Revision
Changes
12-Nov-2007
1 First release
15-Apr-2008
– Updated Figure 1: Internal schematic diagram
2
– Document status promoted from preliminary data to datasheet.
23-Sep-2008
3 VGS value has been changed on Table 2 and Table 5
Obsolete Product(s) - Obsolete Product(s)19-Nov-2009
4
– Added Qg max. value in Table 6
– Added new row in Table 6
Doc ID 14166 Rev 4
11/12
11 Page | ||
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