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PDF IRF741 Data sheet ( Hoja de datos )

Número de pieza IRF741
Descripción N-Channel Power MOSFETs
Fabricantes ART CHIP 
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IRF340-343/IRF740-743 T-39-13
MTM8N35/8N40
N-Channel Power MOSFETs
10A, 350V/400V
Description
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high voltage, high speed
applications, such as off-line switching power supplies, UPS,
AC and DC motor controls, relay and solenoid drivers.
z VGS Rated at ±20V
z Silicon Gate for Fast Switching Speeds
z IDSS, VDS(on), SOA and VGS(th) Specified at Elevated
Temperature
z Rugged
TO-204AA
IRF340
IRF341
IRF342
IRF343
MTM8N35
MTMT8N40
TO-220AB
IRF740
IRF741
IRF742
IRF743
Maximum Ratings
Symbol
VDSS
VDGR
VGS
TJ,Tstg
TL
Characteristic
Drain to Source Voltage
Drain to Gate Voltage
RGS=1.0M
Gate to Source Voltage
Operating Junction Temperature
Storage Temperature
Maximum Lead Temperature
for Soldering Purposes,
1/8” From Case for 5S
Rating
IRF340/342
IRF740/742
MTM8N40
400
400
±20
-55 to +150
275
Rating
IRF341/343
IRF741/743
MTM8N35
350
350
±20
-55 to +150
275
Maximum On-State Characteristics
RDS(on)
Static Drain-to-Source
On Resistance
ID Drain Current
Continuous
Pulsed
Maximum Thermal Characteristics
RӨJC
Thermal Resistance,
Junction to Case
PD Total Power Dissipation
at Tc=25
IRF340/341
IRF740/741
0.55
IRF342/343
IRF742/743
0.80
MTM8N35
MTM8N40
0.55
10 8
8
40 32 48
1.0 1.0 0.83
125 125 150
Notes
For Information concerning connection diagram and package outline, refer to
Section 7.
Unit
V
V
V
A
/W
W
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IRF741 pdf
Typical Performance Curves (Cont.)
Figure 7 Forward Biased Safe Operating Area
IRF340-343/IRF740-743 T-39-13
MTM8N35/8N40
N-Channel Power MOSFETs
10A, 350V/400V
Figure 8 Trainsient Thermal Resistance vs Time
Typical Electrical Characteristics
Figure 9 Switching Test Circuit
Figure 10 Switching Waveforms
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