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TDA21220 Datasheet PDF


TDA21220 - Infineon

Part Number TDA21220
Description High-Performance DrMOS
Manufacturers Infineon 
Logo Infineon Logo 
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TDA21220 datasheet
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TDA21220 pdf, equivalent, schematic
Edition 2013-01-07
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
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TDA21220 transistor, diode fet, igbt, scr
TDA21220
Electrical Specification
4.2 Thermal Characteristics
Table 7
Thermal Characteristics
Parameter
Symbol
Thermal resistance, junction-soldering
point1
Thermal resistance, junction-top of
package
θJS
θJtop
Min.
Values
Typ. Max.
5
Unit
K/W
Note / Test Condition
20
4.3 Recommended Operating Conditions and Electrical Characteristics
Note: VDRV = VCIN = 5 V, TAmbient = 25°C (conditions for table 8 through table 12 unless otherwise specified)
Table 8
Recommended Operating Conditions
Parameter
Symbol
Min.
Input voltage
MOSFET driver voltage
Logic supply voltage
VIN
VDRV
VCIN
5
4.5
4.5
Values
Typ.
Max.
16
5 5.5
5 5.5
Junction temperature
TjOP
-25
125
Unit Note / Test Condition
V
VCIN rising,3.3V to 3.9V:
dvCIN/dt > 300V/s
°C
Table 9
Voltage Supply And Biasing Current
Parameter
Symbol
Driver current
IVDRV_300kHz
Min.
IC current (control)
IVDRV_PWML
IVCIN_PWML
IVCIN_O
IC quiescent
UVLO rising
UVLO falling
IVCIN+IVDRV
VUVLO_R
VUVLO_F
2.9
2.5
Values
Typ.
10
25
400
500
3.5
3.1
Max.
550
3.9
3.3
Unit Note / Test Condition
mA DISB# = 5 V,
fSW = 300 kHz
μA DISB# = 5 V, PWM = 0 V
DISB# = 5 V, PWM = 0 V
SMOD# = Open
DISB# = 5 V,
PWM = Open
SMOD# = Open
DISB# = 0 V
V VCIN rising,3.3V to 3.9V:
dvCIN/dt > 300V/s
VCIN falling
1 The junction-soldering point is referred to the VSWH bottom exposed pad.
Data Sheet
9
Revision 2.5, 2013-01-07





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