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SST12LP17E Datasheet PDF


SST12LP17E - Microchip

Part Number SST12LP17E
Description High-Gain Power Amplifier Module
Manufacturers Microchip 
Logo Microchip Logo 
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SST12LP17E datasheet
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SST12LP17E pdf, equivalent, schematic
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Product Description
Data Sheet
The SST12LP17E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech-
nology.The input/output RF ports are fully matched to 50internally. These RF ports are DC decoupled and
require no DC-blocking capacitors or matching components. This helps reduce the system board’s Bill of Materi-
als (BOM) cost.
SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency Power Amplifier module designed in compli-
ance with IEEE 802.11b/g/n applications. It typically provides 28 dB gain with 28% power-added effi-
ciency (PAE) @ POUT = 21.5 dBm for 802.11g and 33% PAE @ POUT = 22.5 dBm for 802.11b.
This power amplifier has excellent linearity, typically 3% added EVM at 18 dBm output power which is essential
for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 21.5 dBm and 802.11b spectrum
mask at 22.5 dBm. Using MCS7 modulation, with 40 MHz bandwidth, the SST12LP17E provides 17 dBm at
2.5% EVM.
The device also features easy board-level usage along with high-speed power-up/down control through a single
combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP17E control-
lable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating
current, make the SST12LP17E ideal for the final stage power amplification in battery-powered 802.11b/g/n
WLAN transmitter and Bluetooth applications.
The SST12LP17E has an excellent on-chip, single-ended power detector, which features wide dynamic-range,
>15 dB, with dB-wise linear performance. The excellent on-chip power detector provides a reliable solution
to board-level power control.
The SST12LP17E is offered in both 8-contact X2SON and 8-contact USON packages. See Figure 2 for pin
assignments and Table 1 for pin descriptions.
©2014 Silicon Storage Technology, Inc.
2
DS-70005004G 10/14
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SST12LP17E transistor, diode fet, igbt, scr
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Supply Current versus Output Power
170
160
150 Freq=2.412 GHz
140 Freq=2.442 GHz
130 Freq=2.472 GHz
120
110
100
90
80
70
60
50
40
10 11 12 13 14 15 16 17 18 19 20 21 22
Output Power (dBm)
1426 F6.2
Figure 6: Total Current Consumption for 802.11g operation versus Output Power
PAE versus Output Power
34
32
30 Freq=2.412 GHz
28 Freq=2.442 GHz
26
24 Freq=2.472 GHz
22
20
18
16
14
12
10
8
6
4
2
0
10 11 12 13 14 15 16 17 18 19 20 21 22
Output Power (dBm)
1426 F7.2
Figure 7: PAE versus Output Power
©2014 Silicon Storage Technology, Inc.
9
DS-70005004G 10/14





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