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SST12LP17E PDF Datasheet - High-Gain Power Amplifier Module - Microchip

Part Number SST12LP17E
Description High-Gain Power Amplifier Module
Manufacturers Microchip 
Logo Microchip Logo 
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SST12LP17E datasheet, circuit
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
SST12LP17E is a 2.4 GHz high-efficiency, fully-matched power amplifier module
based on the highly-reliable InGaP/GaAs HBT technology. It is designed in compli-
ance with IEEE 802.11b/g/n applications and typically provides 28 dB gain with 28%
power-added efficiency at 21dBm. SST12LP17E has excellent linearity, providing
3% EVM at typically 18 dBm, while meeting 802.11g spectrum mask at 21.5 dBm.
This power amplifier requires no external RF matching, and only requires one exter-
nal DC-bias capacitor to meet the specified performance. It offers high-speed
power-up/-down control through a single reference voltage pin and includes a tem-
perature-stable, VSWR insensitive power detector voltage output. SST12LP17E is
offered in a super-thin (0.4mm maximum) 8-contact X2SON package and a 8-con-
tact USON package.
Features
• Input/Output ports internally matched to 50and
DC decoupled
• High gain:
– Typically 28 dB gain across 2.4–2.5 GHz
• High linear output power:
– >24 dBm P1dB
- Single-tone measurement. Please refer to “Absolute
Maximum Stress Ratings” on page 5
– Meets 802.11g OFDM ACPR requirement up to 21.5
dBm
– 3% EVM up to 18 dBm for 54 Mbps 802.11g signal
– 2.5% EVM up to 17 dBm for 802.11n, MCS7, 40 MHz
– Meets 802.11b ACPR requirement up to 22.5 dBm
– Meets Bluetooth® spectrum mask for 3 Mbps at 17 dBm
typical
• High power-added efficiency/Low operating cur-
rent for 802.11b/g/n applications
– ~28%/138 mA @ POUT = 21.5 dBm for 802.11g
– ~33%/155 mA @ POUT = 22.5 dBm for 802.11b
• Single-pin low IREF power-up/down control
– IREF <2 mA
• Low idle current
– ~60 mA ICQ
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• Low shut-down current (~2 µA)
• Stable performance over temperature
– ~2 dB gain variation between -40°C to +85°C
– ~1 dB power variation between -40°C to +85°C
• Excellent on-chip power detection
– >15 dB dynamic range, dB-wise linear
– VSWR insensitive, temperature stable
• Packages available
– 8-contact X2SON – 2mm x 2mm x 0.4mm
– 8-contact USON – 2mm x 2mm x 0.6mm
• Non-Pb (lead-free), RoHS compliant, and Halogen free
Applications
• WLAN (IEEE 802.11b/g/n)
• Bluetooth®
• Cordless phones
• 2.4 GHz ISM wireless equipment
©2014 Silicon Storage Technology, Inc.
www.microchip.com
DS-70005004G 10/14

1 page

SST12LP17E pdf, schematic
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Product Description
Data Sheet
The SST12LP17E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech-
nology.The input/output RF ports are fully matched to 50internally. These RF ports are DC decoupled and
require no DC-blocking capacitors or matching components. This helps reduce the system board’s Bill of Materi-
als (BOM) cost.
SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency Power Amplifier module designed in compli-
ance with IEEE 802.11b/g/n applications. It typically provides 28 dB gain with 28% power-added effi-
ciency (PAE) @ POUT = 21.5 dBm for 802.11g and 33% PAE @ POUT = 22.5 dBm for 802.11b.
This power amplifier has excellent linearity, typically 3% added EVM at 18 dBm output power which is essential
for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 21.5 dBm and 802.11b spectrum
mask at 22.5 dBm. Using MCS7 modulation, with 40 MHz bandwidth, the SST12LP17E provides 17 dBm at
2.5% EVM.
The device also features easy board-level usage along with high-speed power-up/down control through a single
combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP17E control-
lable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating
current, make the SST12LP17E ideal for the final stage power amplification in battery-powered 802.11b/g/n
WLAN transmitter and Bluetooth applications.
The SST12LP17E has an excellent on-chip, single-ended power detector, which features wide dynamic-range,
>15 dB, with dB-wise linear performance. The excellent on-chip power detector provides a reliable solution
to board-level power control.
The SST12LP17E is offered in both 8-contact X2SON and 8-contact USON packages. See Figure 2 for pin
assignments and Table 1 for pin descriptions.
©2014 Silicon Storage Technology, Inc.
2
DS-70005004G 10/14

2 Page

SST12LP17E equivalent
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Electrical Specifications
Data Sheet
The DC and RF specifications for the power amplifier are specified below. Refer to Table 3 for the DC voltage
and current specifications. Refer to Figures 3 through 8 for the RF performance.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure beyond absolute maximum stress rat-
ing conditions may affect device reliability.)
Input power to pin 3 (PIN). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average output power from Pin 6 (POUT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +25.5 dBm
Supply Voltage at pins 1 and 2 (VCC)2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.0V
Reference voltage to pin 4 (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V
DC supply current (ICC)3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
ESD Level for Human Body Model, HBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1250V
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-
imum rating of average output power could cause permanent damage to the device.
2. VCC maximum rating of 6.0V for RF output power levels up to 10 dBm.
3. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal
Table 2: Operating Range
Range
Industrial
Ambient Temp
-40°C to +85°C
VCC
3.0V to 4.6V
T2.1 75004
Table 3: DC Electrical Characteristics at 25°C
Symbol
VCC
ICQ
VREG
ICC
Parameter
Supply Voltage at pins 1 and 2
Idle current to meet EVM ~3% @ 18 dBm Output Power, 802.11g OFDM
54 Mbps signal
Reference Voltage for pin 4
Current consumption to meet 802.11g OFDM 54 Mbps spectrum mask
@ 21.5 dBm
Current consumption to meet 802.11b DSSS 54 Mbps spectrum mask
@ 22 dBm
Current consumption to meet EVM ~3% @ 18 dBm Output Power with
802.11g OFDM 54 Mbps signal
Min.
3.0
Typ
3.3
60
2.9
138
155
105
Max.
4.6
Unit
V
mA
V
mA
mA
mA
T3.1 75004
©2014 Silicon Storage Technology, Inc.
5
DS-70005004G 10/14

5 Page

SST12LP17E diode, scr
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Supply Current versus Output Power
170
160
150 Freq=2.412 GHz
140 Freq=2.442 GHz
130 Freq=2.472 GHz
120
110
100
90
80
70
60
50
40
10 11 12 13 14 15 16 17 18 19 20 21 22
Output Power (dBm)
1426 F6.2
Figure 6: Total Current Consumption for 802.11g operation versus Output Power
PAE versus Output Power
34
32
30 Freq=2.412 GHz
28 Freq=2.442 GHz
26
24 Freq=2.472 GHz
22
20
18
16
14
12
10
8
6
4
2
0
10 11 12 13 14 15 16 17 18 19 20 21 22
Output Power (dBm)
1426 F7.2
Figure 7: PAE versus Output Power
©2014 Silicon Storage Technology, Inc.
9
DS-70005004G 10/14

9 Page





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