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PDF SST12LP15B Data sheet ( Hoja de datos )
| Número de pieza | SST12LP15B | |
| Descripción | 256 QAM Power Amplifier | |
| Fabricantes | Microchip | |
| Logotipo |  |
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2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier
SST12LP15B
Data Sheet
SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/
GaAs HBT technology. Easily configured for high-linear operation meeting the
EVM requirements for 256 QAM applications, and for high-efficiency applications
with excellent power-added efficiency while operating over the 2.4- 2.5 GHz fre-
quency band. Configured for high efficiency, SST12LP15B will typically meet the
802.11g spectrum mask at 23 dBm with 270 mA. Configured for high linearity,
SST12LP15B will provide less than 2.5% EVM, up to 20 dBm, with MCS7-HT40
modulation, and less than 1.75% EVM, up to 18 dBm, with MCS9-VHT40 modula-
tion. This power amplifier also features easy board-level usage along with high-
speed power-up/down control through the reference voltage pins. The
SST12LP15B is offered in both a 3mm x 3mm, 16-contact VQFN package and a
2mm x 2mm, 12-contact XQFN package.
Features
• High Gain:
– More than 32 dB gain across 2.4–2.5 GHz over tempera-
ture -40°C to +85°C
• Configured for High Linearity
– 20 dBm at 2.5% DEVM, MCS7-HT40, 200mA
– 18 dBm at 1.8% DEVM, MCS9-VHT40, 180 mA
– 23 dBm typical spectrum mask compliance, MCS0-20
• Configured for High Efficiency
– 23 dBm at 3% DEVM, 802.11g OFDM 54 Mbps, 310mA
– 25.5 dBm typical spectrum mask compliance, 802.11b,
1Mbps
– >29 dBm P1dB
– Meets 802.11g OFDM ACPR requirement up to 26 dBm
• High power-added efficiency/Low operating current
• Low IREF current for power-up/down control
– IREF <2 mA
• High-speed power-up/down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
• Low Shut-down Current:2µA
• High temperature stability
– Typically 1 dB gain/power variation between 0°C to
+85°C
• Excellent On-chip power detection
– 20 dB linear dynamic range
– Temperature- and VSWR-insensitive
• Simple input/output matching
• Packages available
– 16-contact VQFN – 3mm x 3mm
– 12-contact XQFN – 2mm x 2mm
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n/256 QAM)
• Cordless phones
• 2.4 GHz ISM wireless equipment
©2014 Silicon Storage Technology, Inc.
www.microchip.com
DS70005029C
07/15
1 page  
2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier
SST12LP15B
Pin Assignments and Pin Descriptions
Data Sheet
16 15 14 13
NC 1
RFIN 2
RFIN 3
NC 4
Top View
(contacts facing down)
RF and DC GND
0
12 VCC3
11 RFOUT
10 RFOUT
9 Det
5 678
1424 16-vqfn P1.0
Figure 3: Pin Assignments for 3mm x 3mm, 16-contact VQFN (QVC)
Table 1: Pin Description for 3mm x 3mm,16-contact VQFN
Symbol
Pin No. Pin Name
Type1 Function
GND
0 Ground
The center pad should be connected to RF ground
with several low inductance, low resistance vias.
NC 1 No Connection
Unconnected pins.
RFIN
2
I RF input, DC decoupled
RFIN
3
I RF input, DC decoupled
NC 4 No Connection
Unconnected pins.
VCCb
5 Power Supply
PWR Supply voltage for bias circuit
VREF1
6
PWR 1st and 2nd stage idle current control
VREF2
7
PWR 3rd stage idle current control
DNU
8 Do Not Use
Do not use or connect
Det 9
O On-chip power detector
RFOUT
10
O RF output
RFOUT
11
O RF output
VCC3
12 Power Supply
PWR Power supply, 3rd stage
NC 13 No Connection
Unconnected pins.
VCC2
14 Power Supply
PWR Power supply, 2nd stage
NC 15 No Connection
Unconnected pins.
VCC1
16 Power Supply
PWR Power supply, 1st stage
1. I=Input, O=Output
T1.0 75029
©2014 Silicon Storage Technology, Inc.
5
DS70005029C
07/15
5 Page 
2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier
SST12LP15B
Data Sheet
3mm x 3mm, 16-contact VQFN High-Linearity Configuration (continued)
Test Conditions: VCC = 3.3V, VREG = 2.85V, TA = 25°C, MCS7-HT40 802.11n Signal,
unless otherwise noted
Power Gain versus Output Power
45
44
43
42
41
40
39
38
37
36
35
34
33
32 2412 MHz
31
30 2442 MHz
29
28 2472 MHz
27
26
25
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
1424 F12.1
Figure 8: Gain versus Output Power
Instantaneous Current versus Output Power
260
250
240
230
220
2412 MHz
210
2442 MHz
200
190
2472 MHz
180
170
160
150
140
130
120
110
100
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Output Power (dBm)
1424 F13.1
Figure 9: Total Current Consumption
©2014 Silicon Storage Technology, Inc.
11
DS70005029C
07/15
11 Page | ||
| Páginas | Total 28 Páginas | |
| PDF Descargar | [ Datasheet SST12LP15B.PDF ] | |
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