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SST12LF09 PDF Datasheet - Microchip

Part Number SST12LF09
Description WLAN Front-End Module
Manufacturers Microchip 
Logo Microchip Logo 
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SST12LF09 datasheet, circuit
SST12LF09
2.4 GHz High-Linearity, WLAN Front-End Module
FEATURES
• Input/output ports internally matched to 50and
DC decoupled
• Package available
- 16-contact X2QFN – 2.5mm x 2.5mmx 0.4mm
• All non-Pb (lead-free) devices are RoHS compliant
Transmitter Chain
• Gain:
- Typically 24 dB gain
• Dynamic linear output power:
- Meets 802.11g OFDM ACPR requirement up to
21 dBm using 3.6V VCC and 22.5 dBm using
5V VCC
- 17 dBm using 3.6V, 18 dBm using 5.0V, at 3%
EVM for 802.11g, 54 Mbps
- 15 dBm using 3.6V, 16 dBm using 5.0V, at
1.75% dynamic EVM for 256 QAM, 40 MHz
bandwidth
• Operating current
- 150 mA @ POUT = 17 dBm for 802.11g, 3.6V
- 130 mA @ POUT = 15 dBm for MCS9, 3.6V
• PA Control current, IPEN:<3 mA
• Idle current, ICQ:90 mA (3.6V VCC)
• Low shut-down current: ~2 μA
• Power-up/down control
- Turn on/off time (10%–90%) <400 ns
• Limited variation over temperature
- ~1 dB power variation between -40°C to +85°C
• Linear on-chip power detection
- Load and temperature insensitive
- >20 dB dynamic range on-chip power detection
Receiver Chain
• Gain: Typically 12 dB gain
• Noise figure: Typically 2.5 dB
• Receiver input P1dB: Typically -6 dBm
• LNA bypass loss: Typically 9 dB
Bluetooth® Chain
• Loss: 1.6dB
• Output P1dB: >25 dBm
APPLICATIONS
• WLAN (IEEE 802.11b/g/n/256 QAM)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
1.0 PRODUCT DESCRIPTION
SST12LF09 is a 2.4 GHz Front-end Module (FEM)
designed in compliance with IEEE 802.11b/g/n and
256 QAM applications. Based on GaAs pHEMT/HBT
technology, it combines a high-performance transmitter
power amplifier (PA), a low-noise receiver amplifier
(LNA) and an antenna Tx/Rx/BT switch (SP3T SW).
The input/output RF ports are single-ended and inter-
nally matched to 50 . These RF ports are DC decou-
pled, and require no DC-blocking capacitors or
matching components. This helps reduce the system
board Bill of Materials (BOM) cost.
There are two components to the FEM: the Transmitter
(TX) chain and the Receiver (RX) chain.
The TX chain includes a high-efficiency PA based on
the InGaP/GaAs HBT technology. The transmitter is
optimized for high linearity, 802.11n and 256 QAM
operation–typically providing 15 dBm with 1.75%
dynamic EVM for 256 QAM, 40 MHz operation and 17
dBm at 3% for 802.11g, 54 Mbps operation at 3.6V. At
5V VCC, the transmitter provides typically 17 dBm with
1.75% dynamic EVM for 256 QAM, 40 MHz operation
and 18 dBm at 3% for 802.11g, 54 Mbps operation.
SST12LF09 has a transmitter on-chip, single-ended
power detector that is stable over temperature and
insensitive to output VSWR. It features a wide
dynamic-range (20 dB) with dB-wise linear operation.
The on-chip power detector provides a reliable solution
to board-level power control.
The Rx chain provides typically 12 dB gain with 2.5 dB
noise figure. With the LNA bypassed, the receiver loss
is typically 9 dB.
SST12LF09 is offered in a 16-contact X2QFN package.
See Figure 3-1 for pin assignments and Table 4-1 for
pin descriptions.
2013 Microchip Technology Inc.
DS75083B-page 1

1 page
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SST12LF09 pdf, schematic
SST12LF09
TO OUR VALUED CUSTOMERS
It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip
products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and
enhanced as new volumes and updates are introduced.
If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E-
mail at docerrors@microchip.com. We welcome your feedback.
Most Current Data Sheet
To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at:
http://www.microchip.com
You can determine the version of a data sheet by examining its literature number found on the bottom outside corner of any page. The
last character of the literature number is the version number, (e.g., DS30000000A is version A of document DS30000000).
Errata
An errata sheet, describing minor operational differences from the data sheet and recommended workarounds, may exist for current
devices. As device/documentation issues become known to us, we will publish an errata sheet. The errata will specify the revision of
silicon and revision of document to which it applies.
To determine if an errata sheet exists for a particular device, please check with one of the following:
• Microchip’s Worldwide Web site; http://www.microchip.com
• Your local Microchip sales office (see last page)
When contacting a sales office, please specify which device, revision of silicon and data sheet (include literature number) you are
using.
Customer Notification System
Register on our web site at www.microchip.com to receive the most current information on all of our products.
DS75083B-page 2
2013 Microchip Technology Inc.

2 Page
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SST12LF09 equivalent
SST12LF09
5.0 ELECTRICAL SPECIFICATIONS
The DC and RF specifications for the power amplifier
are specified below. Refer to Table 5-2 for the DC volt-
age and current specifications.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maxi-
mum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these conditions or conditions greater than those defined in the operational
sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may
affect device reliability.)
Tx input power to pin 5 (TX) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Rx input power to pin 16 (ANT with LNA ON) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm
Average Tx output power from pin 16 (ANT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dBm
Supply Voltage at pins 3 and 4 (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.5V
PA Enable Voltage to pin 6 (PEN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
DC supply current (ICC)2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum
rating of average output power could cause permanent damage to the device.
2. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal
TABLE 5-1:
Range
Extended
OPERATING RANGE
Ambient Temp
-40°C to +85°C
VCC
3.0-5.0V
TABLE 5-2: DC ELECTRICAL CHARACTERISTICS AT 25°C FOR TX CHAIN
Symbol
VCC
ICQ
VPEN
ICC
IDD
Parameter
Supply Voltage, VCC
Tx Idle current for VCC = 3.6V
Tx Idle current for VCC = 5.0V
Tx Enable Voltage
Tx Supply Current for 11g OFDM 54 Mbps signal:
POUT = 17 dBm at VCC = 3.6V
POUT = 18 dBm at VCC = 5.0V
Rx Supply Current (with LNA ON)
Min.
3.0
3.05
Typ
3.6
90
95
3.10
150
160
9
Max.
5.0
3.15
Unit
V
mA
mA
V
mA
mA
mA
2013 Microchip Technology Inc.
DS75083B-page 5

5 Page
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SST12LF09 diode, scr
SST12LF09
FIGURE 6-3:
TRANSMITTER DYNAMIC EVM VERSUS OUTPUT POWER MEASURED USING
256 QAM, 40 MHZ BANDWIDTH WITH EQUALIZER TRAINING USING
SEQUENCE ONLY
10
9
8 2412
7 2442
6
2472
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Output Power (dBm)
75083 F8.0
FIGURE 6-4:
GAIN VERSUS OUTPUT POWER
25
24
23
22
21
20
19
18 2412
17 2442
16 2472
15
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Output Power (dBm)
75083 F2.1
2013 Microchip Technology Inc.
DS75083B-page 9

9 Page





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