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PDF SST12CP33 Data sheet ( Hoja de datos )
| Número de pieza | SST12CP33 | |
| Descripción | 2.4 GHz WLAN Power Amplifier | |
| Fabricantes | Microchip | |
| Logotipo |  |
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SST12CP33
2.4 GHz WLAN Power Amplifier, 802.11b/g/n/256 QAM
Features
• High Gain:
- Typically 38 dB gain across 2.4–2.5 GHz over
temperature -40°C to +85°C
• Linear operation at both 3.3V and 5V
• High linear output power at 5V:
- >30 dBm P1dB
- Meets 802.11b ACPR requirements up to 28
dBm with 30% power-added efficiency
- Meets 802.11g OFDM spectrum mask require-
ment up to 28 dBm
- Typically 25 dBm with <3% EVM, 802.11g,
54 Mbps, 350 mA current
- Typically 24 dBm with <2.5% EVM, 802.11n,
MCS7-HT20, 50% duty cycle
- Typically 23 dBm with <1.75% EVM, MCS9-
VHT40, 50% duty cycle, 320 mA current
• High linear output power at 3.3V:
- Meets 802.11b ACPR requirements up to 25
dBm with 27% power-added efficiency
- Typically 21 dBm with <3% EVM, 802.11g, 54
Mbps, 240 mA current
- Typically 20.5 dBm with <2.5% EVM, 802.11n,
MCS7-HT20, 230 mA current
- Typically 19 dBm with <1.75% EVM, MCS9-
VHT40, 210 mA current
• High-speed power-up/down
- Turn on/off time (10%-90%) <100 ns
• 10:1 VSWR survivability (unconditionally stable
up to 28 dBm)
• On-chip power detection
- >25 dB dynamic range, from 5 dBm to 30 dBm
- VSWR- and temperature-insensitive
• Matched RF input/simple output matching
• Packages available
- 16-contact UQFN (3mm x 3mm)
• All non-Pb (lead-free) devices are RoHS compliant
Applications
• WLAN (IEEE 802.11b/g/n)
• WLAN 256 QAM
• AP router
• Cordless phones
• 2.4 GHz ISM wireless equipment
1.0 PRODUCT DESCRIPTION
SST12CP33 is a high-power, high-gain, WLAN
802.11b/g/n/256 QAM power amplifier (PA) based on
the highly-reliable InGaP/GaAs HBT technology.
This PA can be easily configured for high-power appli-
cations with high power-added efficiency while operat-
ing over the 2.4-2.5 GHz frequency band. It can
operate at both 3.3V and 5V VCC, and typically pro-
vides 38 dB gain with 25% power-added efficiency @
POUT = 28 dBm for 802.11g at 5V.
SST12CP33 has excellent linearity, typically 25 dBm at
3% EVM with 54 Mbps 802.11g operation at 5V while
meeting 802.11g spectrum mask at 28 dBm and 21
dBm at 3% EVM at 3.3V bias. SST12CP33 also has a
single-ended power detector which lowers the users’
cost for power control.
The power amplifier IC also features easy board-level
usage along with high-speed power-up/-down control.
SST12CP33 is offered in 16-contact UQFN package.
See Figure 3-1 for pin assignments and Table 3-1 for
pin descriptions.
2015 Microchip Technology Inc.
DS70005222B-page 1
1 page  
SST12CP33
4.0 ELECTRICAL SPECIFICATIONS
The DC and RF specifications for the power amplifier
are specified below. Refer to Table 4-2 for the DC volt-
age and current specifications.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maxi-
mum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these conditions or conditions greater than those defined in the operational
sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may
affect device reliability.)
Input power to pin 1 (PIN)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +12 dBm
Supply voltage at pins 4, 10, 11, 13 and 15 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6 V
Enable voltage to pin 2 (VPEN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +3.2 V
DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mA
Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC
Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
1. Maximum input power for VCC = 5V with 50% duty cycle, 802.11g 54 Mbps, with maximum output VSWR = 10:1. At VCC > 5V,
a 10Ω resistor must be included on VCC1, as shown in Figures 5-8 and 5-9.
TABLE 4-1:
Range
Industrial
OPERATING RANGE
Ambient Temp
-40°C to +85°C
VCC
3.0V to 5.5V
TABLE 4-2: DC ELECTRICAL CHARACTERISTICS AT 25ºC, VCC = 5V
Symbol Parameter
Min.
VCC
ICC
ICQ
VPEN
IPEN
Supply Voltage
DC Current
for 802.11g, 28 dBm, VCC = 5.0V
for 802.11b, 28 dBm, VCC = 5.0V
for 802.11g, 21 dBm, VCC = 3.3V
Idle Current, VCC = 5.0V
Idle Current, VCC = 3.3V
Enable Voltage see Figure 5-8 on page 10
Enable Current
3.0
2.9
Typ
5.0
440
440
240
275
155
2.95
8
Max.
5.5
3.1
Unit
V
mA
mA
mA
mA
mA
V
mA
2015 Microchip Technology Inc.
DS70005222B-page 5
5 Page 
SST12CP33
FIGURE 5-9:
SCHEMATIC WITH HARMONIC FILTER FOR 256 QAM APPLICATIONS
0 Ω*
0.1 µF
Vcc
10 µF
0.1 µF
1 µF
RFIN
VPEN
50Ω
15 Ω
2.7 nF
0.1 µF
16 15 14 13
1 12
15 nH
2
3
Bias
Circuit
4
56 7
11 50Ω /1mm
10 3.0 pF
9
8
VDET
1.0nH
2.2 pF
1.3nH
1.0 pF
2.7nH
10 pF
1.0 pF
RFOUT
Suggested operation conditions:
1. VCC = 5.0V/ VPEN = 2.95V
2. Center slug to RF ground
* Note: R = 10Ω for robustness at
5.5V VCC
70005222 Schematic.2.0
2015 Microchip Technology Inc.
DS70005222B-page 11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet SST12CP33.PDF ] | |
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