(PDF) 2SB768 Datasheet - Silicon PNP Power Transistor

Número de pieza	2SB768
Descripción	Silicon PNP Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB768 DESCRIPTION ·High voltage:VCEO=-150V ·PNP silicon triple diffused transistor ·Complementary NPN types:2SD1033 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SB768 is designed for color TV vertical deflection output especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 2W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark 1 page

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PDF 2SB768 Data sheet ( Hoja de datos )