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Número de pieza | ME4920-G | |
Descripción | Dual N-Channel 30-V (D-S) MOSFET | |
Fabricantes | Matsuki | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ME4920-G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Dual N-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4920 is the N-Channel logic enhancement mode power field
effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on state
resistance.
These devices are particularly suited for low voltage application such
as cellular phone, notebook computer power management and other
battery powered circuits, and low in-line power loss that are needed
in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4920/ME4920-G
FEATURES
● RDS(ON)≦35 mΩ@VGS=10V
● RDS(ON)≦45 mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter
e Ordering Information: ME4920 (Pb-free)
ME4920-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
Maximum Ratings
30
±20
6
4.8
24
2
1.3
-55 to 150
62.5
The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃
℃/W
Apr,2012-Ver4.2
01
1 page Dual N-Channel 30-V (D-S) MOSFET
ME4920/ME4920-G
SOP-8 Package Outline
MILLIMETERS(mm)
DIM
MIN MAX
A 1.35 1.75
A1 0.10
0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27 BSC
H 5.80 6.20
L 0.40 1.25
θ 0°
7°
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
Apr,2012-Ver4.2
05
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet ME4920-G.PDF ] |
Número de pieza | Descripción | Fabricantes |
ME4920-G | Dual N-Channel 30-V (D-S) MOSFET | Matsuki |
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