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PDF ME4920-G Data sheet ( Hoja de datos )

Número de pieza ME4920-G
Descripción Dual N-Channel 30-V (D-S) MOSFET
Fabricantes Matsuki 
Logotipo Matsuki Logotipo



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No Preview Available ! ME4920-G Hoja de datos, Descripción, Manual

Dual N-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4920 is the N-Channel logic enhancement mode power field
effect transistors, using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on state
resistance.
These devices are particularly suited for low voltage application such
as cellular phone, notebook computer power management and other
battery powered circuits, and low in-line power loss that are needed
in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4920/ME4920-G
FEATURES
RDS(ON)35 mΩ@VGS=10V
RDS(ON)45 mΩ@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
e Ordering Information: ME4920 (Pb-free)
ME4920-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA=25
TA=70
TA=25
TA=70
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
Maximum Ratings
30
±20
6
4.8
24
2
1.3
-55 to 150
62.5
The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃/W
Apr,2012-Ver4.2
01

1 page




ME4920-G pdf
Dual N-Channel 30-V (D-S) MOSFET
ME4920/ME4920-G
SOP-8 Package Outline
MILLIMETERS(mm)
DIM
MIN MAX
A 1.35 1.75
A1 0.10
0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27 BSC
H 5.80 6.20
L 0.40 1.25
θ 0°
7°
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
Apr,2012-Ver4.2
05

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