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PDF IRF540N Data sheet ( Hoja de datos )
| Número de pieza | IRF540N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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 1. - 100V, 33A, MOSFET, Transistor  Hay una vista previa y un enlace de descarga de IRF540N (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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Data Sheet
January 2002
IRF540N
33A, 100V, 0.040 Ohm, N-Channel, Power
MOSFET
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Symbol
DRAIN
(FLANGE)
IRF540N
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.040Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE™ and SABER©
Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
IRF540N
TO-220AB
BRAND
IRF540N
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF540N
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TC=
(TC=
12500oCoC, V, VGGSS==101V0V) )(F(Figiugruere2)2).
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
100
100
±20
33
23
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
120 W
0.80
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300 oC
260 oC
NOTES:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
IRF540N Rev. C
1 page  
IRF540N
Typical Performance Curves (Continued)
1.2
ID = 250µA
4000
VGS = 0V, f = 1MHz
1.1
1.0
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 50V
8
1000
COSS ≅ CDS + CGD
CISS = CGS + CGD
100
CRSS = CGD
20
0.1
1.0 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6
4
WAVEFORMS IN
DESCENDING ORDER:
2 ID = 33A
ID = 17A
0
0 10 20 30 40
Qg, GATE CHARGE (nC)
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
©2002 Fairchild Semiconductor Corporation
IRF540N Rev. C
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF540N.PDF ] | |
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