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PDF 7N60H Data sheet ( Hoja de datos )
| Número de pieza | 7N60H | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | nELL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 7N60H (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SEMICONDUCTOR
7N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(7A, 600Volts)
DESCRIPTION
The Nell 7N60 is a three-terminal silicon
device with current conduction capability of 7A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 600V ,and max.
threshold voltage of 4 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
RDS(ON) = 1.2Ω @ VGS = 10V
Ultra low gate charge(38nC max.)
Low reverse transfer capacitance
(CRSS = 16pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
ID (A)
7
VDSS (V)
600
RDS(ON) (Ω)
1.2 @ VGS = 10V
QG(nC) max.
38
D
GDS
TO-220AB
(7N60A)
D
G
S
TO-263(D2PAK)
(7N60H)
GDS
TO-220F
(7N60AF)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
Drain to Source voltage
Drain to Gate voltage
TJ=25°C to 150°C
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=7A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
IAS=7A, L=19.5mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 7A, VDD = 50V, L = 19.5mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ=25°C.
TO-220AB/TO-263
TC=25°C
TO-220F
1.6mm from case
www.nellsemi.com
Page 1 of 8
VALUE
600
600
±30
7
4.3
28
7
14
500
4.5
140
48
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
ºC
lbf.in (N.m)
1 page  
SEMICONDUCTOR
100
7N60 Series RRooHHSS
Nell High Power Products
Fig.11 Maximum drain current vs. case
temperature
8
6
4
2
0
25
50 75 100 125
Case temperature, TC(°C)
150
Fig.12 Transient thermal response curve
(for 7N60A & 7N60H)
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
Square wave pulse duration (sec.), t1
Fig.13 Transient thermal response curve (for 7N60AF)
101
100
10-1
D = 0.5
0.2
0.1
0.05
0.02
0.01
10-2
Single pulse
Notes:
1.Rth(j-c)(t)=2.5°C/W Max.
2.Duty factor, D=t1/t2
3.TJM-Tc=PDM×Rth(j-c)(t)
PDM
t1
t2
10-5
10-4
10-3
10-2
10-1
100
101
Square wave pulse duration (sec.), t1
www.nellsemi.com
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 7N60H.PDF ] | |
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