TIP42 Datasheet PDF - ON Semiconductor
Part Number | TIP42 | |
Description | Complementary Silicon Plastic Power Transistors | |
Manufacturers | ON Semiconductor | |
Logo | ||
There is a preview and TIP42 download ( pdf file ) link at the bottom of this page. Total 6 Pages |
Preview 1 page No Preview Available ! TIP41, TIP41A, TIP41B,
TIP41C (NPN); TIP42, TIP42A,
TIP42B, TIP42C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
• ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage TIP41, TIP42 VCEO 40 Vdc
TIP41A, TIP42A
60
TIP41B, TIP42B
80
TIP41C, TIP42C
100
Collector−Base Voltage
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
VCB
40 Vdc
60
80
100
Emitter−Base Voltage
Collector Current−
Continuous
Peak
VEB
IC
5.0 Vdc
6.0 Adc
10
Base Current
Total Power Dissipation @ TC = 25°C
Derate above 25°C
IB 2.0 Adc
PD 65 W
0.52 W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD 2.0 W
0.016 W/°C
Unclamped Inductive Load Energy
(Note 1)
E 62.5 mJ
Operating and Storage Junction,
Temperature Range
TJ, Tstg
– 65 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.67 °C/W
Thermal Resistance, Junction−to−Ambient RqJA
57 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W.
http://onsemi.com
6 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
40−60−80−100 VOLTS,
65 WATTS
MARKING
DIAGRAM
4
1
2
3
TO−220AB
CASE 221A
STYLE 1
TIP4xxG
AYWW
TIP4xx
xx
A
Y
WW
G
= Device Code
= 1, 1A, 1B, 1C
2, 2A, 2B, 2C
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 6
1
Publication Order Number:
TIP41A/D
|
|
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
500
300
200 TJ = 150°C
100
70 25°C
50
30
20 −55 °C
VCE = 2.0 V
10
7.0
5.0
0.06
0.1
0.2 0.3 0.4 0.6 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
4.0 6.0
2.0
TJ = 25°C
1.6
1.2 IC = 1.0 A
0.8
2.5 A
5.0 A
0.4
0
10 20 30 50
100 200 300 500 1000
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
2.0
TJ = 25°C
1.6
1.2
0.8 VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.06 0.1
0.2 0.3 0.4 0.6
1.0
2.0 3.0 4.0 6.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
+2.5
+2.0 *APPLIES FOR IC/IB ≤ hFE/4
+1.5
+1.0
+0.5
* qVC FOR VCE(sat)
0
−0.5
−1.0
+25 °C to +150°C
−55 °C to +25°C
+25 °C to +150°C
−1.5
−2.0
−2.5
0.06
qVB FOR VBE
−55 °C to +25°C
0.1 0.2 0.3 0.5
1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)
6.0
Figure 11. Temperature Coefficients
103
VCE = 30 V
102
TJ = 150°C
101 100°C
100
25°C
10−1
10−2 REVERSE
IC = ICES
FORWARD
10−3
−0.3 −0.2 −0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
10 M
1.0 M
100 k
IC ≈ ICES
IC = 10 x ICES
VCE = 30 V
10 k
IC = 2 x ICES
1.0 k (TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
0.1 k
20
40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
160
Figure 13. Effects of Base−Emitter Resistance
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for TIP42 electronic component. |
Information | Total 6 Pages | |
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