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Datasheet CJ502K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CJ502K | P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ502K P-CHANNEL MOSFET
V(BR)DSS
-50 V
RDS(on)MAX
8Ω@-10V
10Ω@-5V
ID
-180mA
DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in s |  JCET | mosfet |
| 2 | CJ502K | P-CHANNEL MOSFET CJ502K
SOT-23 Plastic-Encapsulate MOSFETS
CJ502K P-CHANNEL MOSFET
DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.
SOT-23
FEATURE z Energy efficient z Miniature surface mount package saves b |  ZPSEMI | mosfet |
CJ5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CJ502K | P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ502K P-CHANNEL MOSFET
V(BR)DSS
-50 V
RDS(on)MAX
8Ω@-10V
10Ω@-5V
ID
-180mA
DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in s JCET mosfet | | |
| 2 | CJ502K | P-CHANNEL MOSFET CJ502K
SOT-23 Plastic-Encapsulate MOSFETS
CJ502K P-CHANNEL MOSFET
DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.
SOT-23
FEATURE z Energy efficient z Miniature surface mount package saves b ZPSEMI mosfet | | |
| 3 | CJ5853DC | P-channel MOSFET and Schottky Barrier Diode JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-08L-B Power Management MOSFETs-Schottky
CJ5853DC P-channel MOSFET and Schottky Barrier Diode
V(BR)DSS/VR
-20V 20V
RDS(on)MAX
110mΩ@-4.5V 160mΩ@-2.5V 240mΩ@-1.8V
/
ID/IO
-2.7A 1A
DFNWB3×2-08L-B
C D
FEATURES
APPLICATIONS
z JCET mosfet | | |
| 4 | CJ5853DCB | P-channel MOSFET and Schottky Barrier Diode JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-08L-B Power Management MOSFETs-Schottky
CJ5853DCB P-channel MOSFET and Schottky Barrier Diode
V(BR)DSS/VR
-20V 20V
RDS(on)MAX
110mΩ@-4.5V 160mΩ@-2.5V 240mΩ@-1.8V
/
ID/IO
-2.7A 0.5A
DFNWB3×2-08L-B
FEATURE z Independent Pino JCET mosfet | | |
| 5 | CJ5903DC | Dual P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3*2-8L-B Plastic-Encapsulate MOSFETS
CJ5903DC
V(BR)DSS
-20V
Dual P-Channel MOSFET
RDS(on)MAX
70 mΩ@-4.5V
90 mΩ@-2.5V 120 mΩ@-1.8V
ID
-4.5A
DFNWB3*2-8L-B
D1 D2
FEATURE Surface Mount Package TrenchFET Power MOSFET
MARKING
JCET mosfet | |
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