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Datasheet 1N5406G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N5406G | GLASS PASSIVATED SILICON RECTIFIER 1N5400G THRU 1N5408G
GLASS PASSIVATED SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
DO-201AD
0.220 (5.6) 0.197(5.0)
DIA.
1.0 (25.4) MIN.
0.375(9.5) 0.285(7.2)
FEATURES
The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Const | Shunye | rectifier |
2 | 1N5406G | Glass Passivated Rectifiers CREAT BY ART
Glass Passivated Rectifiers
FEATURES
- Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free accor | Taiwan Semiconductor | rectifier |
3 | 1N5406G | 3.0A GLASS PASSIVATED RECTIFIER 1N5400G - 1N5408G
3.0A GLASS PASSIVATED RECTIFIER Features
· · · · · Glass Passivated Die Construction Diffused Junction High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Plastic Material has UL Flammability Classification 94V-0
A
B
A
D
C
Mechanical Da | Diodes Incorporated | rectifier |
4 | 1N5406G | 3A GENERAL PURPOSE GPP DIODES | Leshan Radio Company | diode |
5 | 1N5406G | GLASS PASSIVATED JUNCTION RECTIFIER 1N5400G THRU 1N5408G
GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High temperature metallurgically bonded construction Glass passivated cavity-free junction | GOOD-ARK Electronics | rectifier |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re Unisonic Technologies mosfet | | |
4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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Número de pieza | Descripción | Fabricantes | |
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