GS8672D37BGE Datasheet PDF - GSI Technology
Part Number | GS8672D37BGE | |
Description | 72Mb SigmaQuad-II+ Burst of 4 ECCRAM | |
Manufacturers | GSI Technology | |
Logo | ||
There is a preview and GS8672D37BGE download ( pdf file ) link at the bottom of this page. Total 28 Pages |
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165-Bump BGA
Commercial Temp
Industrial Temp
72Mb SigmaQuadTM-II+
Burst of 4 ECCRAMTM
450 MHz–300 MHz
1.8 V VDD
1.5 V I/O
Features
• 2.0 Clock Latency
• On-Chip ECC with virtually zero SER
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write Capability due to ECC
• Burst of 4 Read and Write
• On-Die Termination (ODT) on Data (D), Byte Write (BW),
and Clock (K, K) outputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with 18Mb, 36Mb and 144Mb devices
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
SigmaQuad™ ECCRAM Overview
The GS8672D19/37BE are built in compliance with the
SigmaQuad-II+ ECCRAM pinout standard for Separate I/O
synchronous ECCRAMs. They are 75,497,472-bit (72Mb)
ECCRAMs. The GS8672D19/37BE SigmaQuad ECCRAMs
are just one element in a family of low power, low voltage
HSTL I/O ECCRAMs designed to operate at the speeds needed
to implement economical high performance networking
systems.
Clocking and Addressing Schemes
The GS8672D19/37BE SigmaQuad-II+ ECCRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer.
Each internal read and write operation in a SigmaQuad-II+ B4
ECCRAM is four times wider than the device I/O bus. An
input data bus de-multiplexer is used to accumulate incoming
data before it is simultaneously written to the memory array.
An output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore the address
field of a SigmaQuad-II+ B4 ECCRAM is always two address
pins less than the advertised index depth (e.g., the 4M x18 has
a 1M addressable index).
On-Chip Error Correction Code
GSI's ECCRAMs implement an ECC algorithm that detects
and corrects all single-bit memory errors, including those
induced by Soft Error Rate (SER) events such as cosmic rays,
alpha particles. The resulting SER of these devices is
anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude
improvement over comparable ECCRAMs with no On-Chip
ECC, which typically have an SER of 200 FITs/Mb or more.
SER quoted above is based on reading taken at sea level.
However, the On-Chip Error Correction (ECC) will be
disabled if a “Half Write” operation is initiated. See the Byte
Write Contol section for further information.
tKHKH
tKHQV
-450
2.2 ns
0.45 ns
Parameter Synopsis
-400
2.5 ns
0.45 ns
-375
2.67 ns
0.45 ns
-333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
Rev: 1.02a 6/2013
1/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
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GS8672D19/37BE-450/400/375/333/300
Background
Separate I/O SRAMs, from a system architecture point of view, are attractive in applications where alternating reads and writes are
needed. Therefore, the SigmaQuad-II+ ECCRAM interface and truth table are optimized for alternating reads and writes. Separate
I/O SRAMs are unpopular in applications where multiple reads or multiple writes are needed because burst read or write transfers
from Separate I/O SRAMs can cut the RAM’s bandwidth in half.
SigmaQuad-II+ B4 ECCRAM DDR Read
The status of the Address Input, W, and R pins are sampled by the rising edges of K. W and R high causes chip disable. A low on
the Read Enable-bar pin, R, begins a read cycle. R is always ignored if the previous command loaded was a read command.
Clocking in a high on the Read Enable-bar pin, R, begins a read port deselect cycle.
SigmaQuad-II+ B4 ECCRAM DDR Write
The status of the Address Input, W, and R pins are sampled by the rising edges of K. W and R high causes chip disable. A low on
the Write Enable-bar pin, W, and a high on the Read Enable-bar pin, R, begins a write cycle. W is always ignored if the previous
command was a write command. Data is clocked in by the next rising edge of K, the rising edge of K after that, the next rising edge
of K, and finally by the next rising edge of K. and by the rising edge of the K that follows.
Rev: 1.02a 6/2013
5/28
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
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