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What is 1N5396G?

This electronic component, produced by the manufacturer "EIC discrete Semiconductors", performs the same function as "GLASS PASSIVATED JUNCTION SILICON RECTIFIERS".


1N5396G Datasheet PDF - EIC discrete Semiconductors

Part Number 1N5396G
Description GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
Manufacturers EIC discrete Semiconductors 
Logo EIC discrete Semiconductors Logo 


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1N5391G - 1N5399G
PRV : 50 - 1000 Volts
Io : 1.5 Amperes
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
DO - 41
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
1N 1N 1N 1N 1N 1N 1N 1N 1N
SYMBOL 5391G 5392G 5393G 5394G 5395G 5396G 5397G 5398G 5399G UNIT
Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 300 400 500 600 800 1000 Volts
Maximum RMS Voltage
VRMS 35 70 140 210 280 350 420 560 700 Volts
Maximum DC Blocking Voltage
VDC 50 100 200 300 400 500 600 800 1000 Volts
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
IF(AV)
IFSM
1.5 Amps.
50 Amps.
Maximum Forward Voltage at IF = 1.5 Amps.
VF
1.1 Volts
Maximum DC Reverse Current Ta = 25 °C
IR
5.0 µA
at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA
Typical Junction Capacitance (Note1)
CJ
15 pF
Typical Thermal Resistance (Note2)
RθJA
30 °C/W
Junction Temperature Range
TJ
- 65 to + 175
°C
Storage Temperature Range
TSTG
- 65 to + 175
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
UPDATE : AUGUST 2, 1998


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1N5396G datasheet


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