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Número de pieza | AM3949P | |
Descripción | P-Channel MOSFET | |
Fabricantes | Analog Power | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AM3949P (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Analog Power
P-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low rDS(on) provides higher efficiency and
extends battery life
G1
•
Low thermal impedance copper leadframe
TSOP-6 saves board space
S2
G2
• Fast switching speed
• High performance trench technology
AM3949P
PRODUCTSUMMARY
VDS (V)
rDS(on) (Ω)
-40 0.185 @VGS= -10V
0.240 @VGS= -4.5V
ID (A)
-2.5
-1.9
TSOP-6
Top View
16
25
34
D1
S1
D2
S1
G1
S2
G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
-40
±20
V
-2.5
-1.9 A
-10
Continuous Source Current (Diode Conduction)a
IS ±1.6 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
1.15
0.7
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RthJA
Typ
93
130
Max
110
150
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM3949_A
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet AM3949P.PDF ] |
Número de pieza | Descripción | Fabricantes |
AM3949P | P-Channel MOSFET | Analog Power |
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