K08T120 Datasheet PDF - Infineon
Part Number | K08T120 | |
Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
Manufacturers | Infineon | |
Logo | ||
There is a preview and K08T120 download ( pdf file ) link at the bottom of this page. Total 16 Pages |
Preview 1 page No Preview Available ! TrenchStop® Series
IKW08T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced VCE(sat)
and 0.5V reduced VF compared to BUP305D
Short circuit withstand time – 10s
Designed for :
G
E
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
PG-TO-247-3
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW08T120 1200V 8A
1.7V
150C K08T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-247-3
Value
1200
16
8
24
24
16
8
24
20
10
70
-40...+150
-55...+150
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.4 12.06.2013
|
|
TrenchStop® Series
IKW08T120
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=150C,
VCC=600V, IC=8A,
VGE=0/15V,
RG= 81,
L1)=180nH,
C1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150C
VR=600V, IF=8A,
diF/dt=600A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
40
26
570
140
1.08
1.2
2.28
200
2.3
20
320
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
5
Rev. 2.4 12.06.2013
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K08T120 electronic component. |
Information | Total 16 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ K08T120.PDF Datasheet ] |
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