NCP81239 Datasheet PDF - ON Semiconductor
Part Number | NCP81239 | |
Description | USB Power Delivery 4-Switch Buck Boost Controller | |
Manufacturers | ON Semiconductor | |
Logo | ||
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USB Power Delivery
4-Switch Buck Boost
Controller
The NCP81239 USB Power Delivery (PD) Controller is a
synchronous buck boost that is optimized for converting battery
voltage or adaptor voltage into power supply rails required in
notebook, tablet, and desktop systems, as well as many other
consumer devices using USB PD standard and C−Type cables. The
NCP81239 is fully compliant to the USB Power Delivery
Specification when used in conjunction with a USB PD or C−Type
Interface Controller. NCP81239 is designed for applications requiring
dynamically controlled slew rate limited output voltage that require
either voltage higher or lower than the input voltage. The NCP81239
drives 4 NMOSFET switches, allowing it to buck or boost and support
the consumer and provider role swap function specified in the USB
Power Delivery Specification which is suitable for all USB PD
applications. The USB PD Buck Boost Controller operates with a
supply and load range of 4.5 V to 28 V.
Features
• Wide Input Voltage Range: from 4.5 V to 28 V
• Dynamically Programmed Frequency from 150 kHz to 1.2 MHz
• I2C Interface
• Real Time Power Good Indication
• Controlled Slew Rate Voltage Transitioning
• Feedback Pin with Internally Programmed Reference
• Support USBPD/QC2.0/QC3.0 Profile
• 2 Independent Current Sensing Inputs
• Over Temperature Protection
• Adaptive Non−Overlap Gate Drivers
• Filter Capacitor Switch Control
• Over−Voltage and Over−Current Protection
• Dead Battery Power Support
• 5 x 5 mm QFN32 Package
Typical Application
• Notebooks, Tablets, Desktops
• All in Ones
• Monitors, TVs, and Set Top Boxes
• Consumer Electronics
www.onsemi.com
1 32
QFN32 5x5, 0.5P
CASE 485CE
MARKING DIAGRAM
1
NCP81239
AWLYYWWG
G
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NCP81239MNTXG QFN32 4000 / Tape
(Pb−Free) & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 0
1
Publication Order Number:
NCP81239/D
|
|
NCP81239
Table 2. MAXIMUM RATINGS
Over operating free−air temperature range unless otherwise noted
Rating
Symbol
Min
Max Unit
CFET Driver
CFET
−0.3
VCC + 0.3
V
Driver 1 and Driver 2 Positive Rails
BST1,
BST2
−0.3 V wrt/PGND
−0.3 V wrt/VSW
35 V wrt/PGND
5.5 V wrt/VSW
V
High Side Driver 1 and Driver 2
HSG1,
HSG2
−0.3 V wrt/PGND
−0.3 V wrt/VSW
30 V wrt/GND
5.5 V wrt/VSW
V
Switching Nodes and Return Path of Driver 1 and
Driver 2
VSW1,
VSW2
−5.0 V
35 V
V
Low Side Driver 1 and Driver 2
LSG1,
LSG2
−0.3 V
5.5 V
PMOSFET Driver
PDRV
−0.3 40 V
Voltage Differential
AGND to PGND
−0.3
0.3 V
CSP1−CSN1, CSP2−CSN2 Differential Voltage
CS1DIF,
CS2DIF
−0.5 0.5 V
PDRV Maximum Current
PDRVI
0 10 mA
Maximum VCC Current
VCCI
0 80 mA
Operating Junction Temperature Range (Note 1)
TJ
−40 150 °C
Operating Ambient Temperature Range
TA
−40 85 °C
Storage Temperature Range
TSTG
−55 150 °C
Thermal Characteristics (Note 2)
QFN 32 5mm x 5mm
Maximum Power Dissipation @ TA = 25°C
Thermal Resistance Junction−to−Air with Solder
PD
RQJA
3.53 W
35.4 °C/W
Lead Temperature Soldering (10 sec):
Reflow (SMD styles only) Pb−Free (Note 3)
RF
260 Peak
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The maximum package power dissipation limit must not be exceeded.
2. The value of QJA is measured with the device mounted on a 3in x 3in, 4 layer, 0.062 inch FR−4 board with 1.5 oz. copper on the top and
bottom layers and 0.5 ounce copper on the inner layers, in a still air environment with TA = 25°C.
3. 60−180 seconds minimum above 237°C.
Table 3. ELECTRICAL CHARACTERISTICS
(V1 = 12 V, Vout = 1.0 V , TA = +25°C for typical value; −40°C < TA < 100°C for min/max values unless noted otherwise)
Parameter
Symbol
Test Conditions
Min Typ
Power Supply
V1 Operating Input Voltage
V1
4.5
VDRV Operating Input Voltage
VDRV
4.5 5
VCC UVLO Rising Threshold
UVLO Hysteresis for VCC
VDRV UVLO Rising Threshold
UVLO Hysteresis for VDRV
VCC Output Voltage
VCCSTART
VCCVHYS
VDRVSTART
VDRVHYS
VCC
Falling Hysteresis
Falling Hysteresis
With no external load
4.16
200
4.16
200
4.90 5
VCC Drop Out Voltage
VCCDROOP 30 mA load
150
VCC Output Current Limit
IOUTVCC
VCC Loaded to 4.3 V
80 97
Max
28
5.5
Units
V
V
V
mV
V
mV
V
mV
mA
4. Ensured by design. Not production tested.
www.onsemi.com
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Information | Total 19 Pages | |
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