H9TQ17ABJTMCUR-KTM Datasheet PDF - Hynix Semiconductor
Part Number | H9TQ17ABJTMCUR-KTM | |
Description | 16GB eNAND (x8) / LPDDR3 16Gb(x32) | |
Manufacturers | Hynix Semiconductor | |
Logo | ||
There is a preview and H9TQ17ABJTMCUR-KTM download ( pdf file ) link at the bottom of this page. Total 30 Pages |
Preview 1 page No Preview Available ! CI-MCP Specification
16GB eNAND (x8)
+ 16Gb LPDDR3 (x32)
This document is a general product description and is subject to change without notice. SK hynix does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 0.1 / Mar. 2014
1
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Preliminary
H9TQ17ABJTMCUR series
16GB eNAND (x8) / LPDDR3 16Gb(x32)
ORDERING INFORMATION
Part Number
Memory
Combination
Operation
Voltage
H9TQ17ABJTMCUR-KTM
e-NAND
LPDDR3
3.3V
1.8V/1.2/1.2/1.2
H9TQ17ABJTMCUR-KUM
e-NAND
LPDDR3
3.3V
1.8V/1.2/1.2/1.2
Density
16GB (x8)
16Gb (x32)
16GB (x8)
16Gb (x32)
Speed
Package
200MHz
221Ball FBGA
DDR3 1600 (Lead & Halogen Free)
200MHz
221Ball FBGA
DDR3 1866 (Lead & Halogen Free)
H 9 TQ 1 7 A B J T M C U R - K * M
SK Hynix Memory
MCP/PoP
Product Mode :
CI-MCP NAND DDR3
Density, Stack, Block Size
& Page Buffer for NVM :
128Gb, DDP, LB, MLC
Voltage & I/O for NVM :
3.3V, x8
Density, Stack, CH & CS for DRAM :
16Gb, DDP, 1Ch, 2CS
Voltage, I/O & Option for DRAM :
1.2v, x32, LPDDR3
Temperature :
Standard (-25~85’C)
DRAM Speed
Ci-NAND Speed : 200Mhz
Package Material :
Lead & Halogen Free
Package Type :
FBGA 221 Ball 11.5x13
Generation : 1st
Rev 0.1 / Mar. 2014
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H9TQ17ABJTMCUR-KTM electronic component. |
Information | Total 30 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ H9TQ17ABJTMCUR-KTM.PDF Datasheet ] |
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