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What is H9TQ17ABJTMCUR-KTM?

This electronic component, produced by the manufacturer "Hynix Semiconductor", performs the same function as "16GB eNAND (x8) / LPDDR3 16Gb(x32)".


H9TQ17ABJTMCUR-KTM Datasheet PDF - Hynix Semiconductor

Part Number H9TQ17ABJTMCUR-KTM
Description 16GB eNAND (x8) / LPDDR3 16Gb(x32)
Manufacturers Hynix Semiconductor 
Logo Hynix Semiconductor Logo 


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CI-MCP Specification
16GB eNAND (x8)
+ 16Gb LPDDR3 (x32)
This document is a general product description and is subject to change without notice. SK hynix does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 0.1 / Mar. 2014
1

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H9TQ17ABJTMCUR-KTM equivalent
Preliminary
H9TQ17ABJTMCUR series
16GB eNAND (x8) / LPDDR3 16Gb(x32)
ORDERING INFORMATION
Part Number
Memory
Combination
Operation
Voltage
H9TQ17ABJTMCUR-KTM
e-NAND
LPDDR3
3.3V
1.8V/1.2/1.2/1.2
H9TQ17ABJTMCUR-KUM
e-NAND
LPDDR3
3.3V
1.8V/1.2/1.2/1.2
Density
16GB (x8)
16Gb (x32)
16GB (x8)
16Gb (x32)
Speed
Package
200MHz
221Ball FBGA
DDR3 1600 (Lead & Halogen Free)
200MHz
221Ball FBGA
DDR3 1866 (Lead & Halogen Free)
H 9 TQ 1 7 A B J T M C U R - K * M
SK Hynix Memory
MCP/PoP
Product Mode :
CI-MCP NAND DDR3
Density, Stack, Block Size
& Page Buffer for NVM :
128Gb, DDP, LB, MLC
Voltage & I/O for NVM :
3.3V, x8
Density, Stack, CH & CS for DRAM :
16Gb, DDP, 1Ch, 2CS
Voltage, I/O & Option for DRAM :
1.2v, x32, LPDDR3
Temperature :
Standard (-25~85’C)
DRAM Speed
Ci-NAND Speed : 200Mhz
Package Material :
Lead & Halogen Free
Package Type :
FBGA 221 Ball 11.5x13
Generation : 1st
Rev 0.1 / Mar. 2014
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H9TQ17ABJTMCUR-KTM electronic component.


Information Total 30 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
H9TQ17ABJTMCUR-KTMThe function is 16GB eNAND (x8) / LPDDR3 16Gb(x32). Hynix SemiconductorHynix Semiconductor

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