DataSheet.es    


PDF ICE20N170B Data sheet ( Hoja de datos )

Número de pieza ICE20N170B
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Micross Components 
Logotipo Micross Components Logotipo



Hay una vista previa y un enlace de descarga de ICE20N170B (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! ICE20N170B Hoja de datos, Descripción, Manual

ICE20N170B
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
20A
600V
0.17Ω
62nC
Pin Description:
TO-263
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
20
62
520
20
50
±20
±30
208
-55 to +150
A TC = 25°C
A TC = 25°C
mJ ID = 8.5A
A Limited by Tjmax
V/ns VDS = 480V, ID = 17A, Tj = 125°C
Static
V
AC (f>Hz)
W TC = 25°C
°C
Max
Min
Typ
Typ
D
S
Symbol Parameter
Values
Min Typ Max
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
RthJA Thermal Resistance, Junction to Ambient
Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
-
-
-
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
600
2.1
-
-
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
-
-
-
RGS Gate Resistance
-
- 0.7
- 62
- 260
640 -
3 3.9
0.1 1
- 100
- 100
0.17 0.199
0.52 -
4.3 -
Unit Conditions
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 600V, VGS = 0V, Tj = 25°C
VDS = 600V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
VGS = 10V, ID = 10A, Tj = 25°C
VGS = 10V, ID = 10A, Tj = 150°C
f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
1

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet ICE20N170B.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
ICE20N170N-Channel Enhancement Mode MOSFETIcemos
Icemos
ICE20N170N-Channel Enhancement Mode MOSFETMicross Components
Micross Components
ICE20N170BN-Channel Enhancement Mode MOSFETIcemos
Icemos
ICE20N170BN-Channel Enhancement Mode MOSFETMicross Components
Micross Components

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar