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AP05G120SW-HF Datasheet PDF - Advanced Power Electronics

Part Number AP05G120SW-HF
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Manufacturers Advanced Power Electronics 
Logo Advanced Power Electronics Logo 

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Advanced Power
Electronics Corp.
AP05G120SW-HF
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
Features
High Speed Switching
Low Saturation Voltage
VCE(sat)=2.3V@IC=5A
CO-PAK, IGBT With FRD
RoHS Compliant & Halogen-Free
G
C
E
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE
IC@TC=25
IC@TC=100
ICM
IF@TC=100
IFM
PD@TC=25
TSTG
TJ
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current1
Diode Forward Current
Diode Pulse Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
VCES
IC
G
Rating
1200
+30
21
10.5
42
6
40
125
-55 to 150
-55 to 150
300
1200V
10.5A
C
E
Units
V
V
A
A
A
A
A
W
Notes:
1.Pulse width limited by max. junction temperature.
Thermal Data
Symbol
Parameter
Rthj-c(IGBT) Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Value
1
2
40
Units
/W
/W
/W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
IGES Gate-to-Emitter Leakage Current
VGE=+30V, VCE=0V
--
ICES Collector-Emitter Leakage Current
VCE=1200V, VGE=0V
--
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=5A
- 2.3
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
3-
Qg Total Gate Charge
IC=5A
- 33
Qge Gate-Emitter Charge
VCC=600V
- 6.5
Qgc Gate-Collector Charge
td(on)
Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
VGE=15V
VCC=960V,
Ic=5A,
VGE=15V,
RG=22Ω,
Inductive Load
- 17.5
- 30
- 13
- 130
- 230
- 0.3
Eoff Turn-Off Switching Loss
- 0.5
Cies Input Capacitance
VGE=0V
- 680
Coes Output Capacitance
VCE=30V
- 65
Cres Reverse Transfer Capacitance
f=1.0MHz
- 10
Electrical Characteristics of Diode@Tj=25(unless otherwise specified)
+500
1
2.7
7
53
-
-
-
-
-
460
-
-
1088
-
-
nA
mA
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
VF Forward Voltage
VF Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF=6A
IF=20A
IF=10A
di/dt = 100 A/µs
- 2.6 3
V
- - 4V
- 54 - ns
- 138 - nC
Data and specifications subject to change without notice
1
201210244



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