|
|
PDF AP05G120NSW-HF Data sheet ( Hoja de datos )
| Número de pieza | AP05G120NSW-HF | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AP05G120NSW-HF (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
Advanced Power
Electronics Corp.
AP05G120NSW-HF
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
Features
▼ High Speed Switching
▼ NPT Technology
▼ RoHS Compliant & Halogen-Free
GC
E
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE
IC@TC=25℃
IC@TC=100℃
ICM
IF@TC=100℃
IFM
PD@TC=25℃
TSTG
TJ
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current1
Diode Forward Current
Diode Pulse Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
TO-3P
VCES
IC
Rating
1200
+30
21
10.5
42
8
40
125
-55 to 150
-55 to 150
300
1200V
10.5A
Units
V
V
A
A
A
A
A
W
℃
℃
℃
Notes:
1.Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Parameter
Rthj-c(IGBT) Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Value
1
2
40
Units
℃/W
℃/W
℃/W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
IGES Gate-to-Emitter Leakage Current
VGE=+30V, VCE=0V
--
ICES Collector-Emitter Leakage Current
VCE=1200V, VGE=0V
--
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=5A
-2
VGE=15V, IC=10A
- 2.5
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=10mA
3.5 -
Qg Total Gate Charge
IC=5A
- 33
Qge Gate-Emitter Charge
VCC=600V
- 6.5
Qgc Gate-Collector Charge
td(on)
Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
VGE=15V
VCC=960V,
Ic=5A,
VGE=15V,
RG=22Ω,
Inductive Load
- 16.5
-8
- 20
- 50
- 400
- 0.7
Eoff Turn-Off Switching Loss
- 1.1
Cies Input Capacitance
VGE=0V
- 690
Coes Output Capacitance
VCE=30V
- 65
Cres Reverse Transfer Capacitance
f=1.0MHz
-9
Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
VF Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF=8A
IF=8A
di/dt = 100 A/µs
- 2.5
- 70
- 170
Max.
+500
1
2.7
-
8
53
-
-
-
-
-
800
-
-
1100
-
-
Max.
3.2
-
-
Units
nA
mA
V
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
Units
V
ns
nC
Data and specifications subject to change without notice
1
201205151
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AP05G120NSW-HF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AP05G120NSW-HF | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |