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PDF AP28G40GEO Data sheet ( Hoja de datos )
| Número de pieza | AP28G40GEO | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP28G40GEO
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ High Input Impedance
▼ High Peak Current Capability
▼ Low Gate Drive
▼ Strobe Flash Applications
C
C
C
C
TSSOP-8
G
E
E
E
VCE
ICP
G
400V
150A
C
E
Absolute Maximum Ratings
Symbol
Parameter
VCE
VGEP
ICP
PD@TA=25℃1
TSTG
TJ
Collector-Emitter Voltage
Peak Gate-Emitter Voltage
Pulsed Collector Current, VGE @ 2.5V
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
400
±6
150
1
-55 to 150
150
Units
V
V
A
W
℃
℃
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
IGES
Gate-Emitter Leakage Current
VGE=± 6V, VCE=0V
--
ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V
--
VCE(sat)
Collector-Emitter Saturation Voltage VGE=2.5V, ICP=150A (Pulsed)
- 5.2
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
0.3 -
Qg Total Gate Charge
IC=40A
- 76
Qge Gate-Emitter Charge
VCE=200V
-4
Qgc Gate-Collector Charge
VGE=4V
- 26
td(on)
Turn-on Delay Time
VCC=320V
- 220
tr Rise Time
IC=160A
- 800
td(off)
Turn-off Delay Time
RG=10Ω
- 1.6
tf Fall Time
VGE=4V
- 1.5
Cies Input Capacitance
VGE=0V
- 4485
Coes Output Capacitance
VCE=30V
- 44
Cres
RthJA1
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
- 40
--
Max.
±10
10
9
1.2
130
-
-
-
-
-
-
8240
-
-
125
Units
uA
uA
V
V
nC
nC
nC
ns
ns
µs
µs
pF
pF
pF
℃/W
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s.
Data and specifications subject to change without notice
1
200805306
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP28G40GEO.PDF ] | |
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