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Datasheet PJX8872B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PJX8872B | N-Channel Enhancement Mode MOSFET PPJX8872B
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current 200mA
Features
RDS(ON) , VGS@10V, ID@600mA<3Ω RDS(ON) , [email protected], ID@200mA<4Ω Advanced Trench Process Technology Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with |  Pan Jit International | mosfet |
PJX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PJX138K | N-Channel Enhancement Mode MOSFET PPJX138K
50V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
50 V
Current
350mA
SOT-563
Features
RDS(ON) , VGS@10V, ID@500mA<1.6Ω RDS(ON) , [email protected], ID@200mA<2.5Ω RDS(ON) , [email protected], ID@100mA<4.5Ω Advanced Trench Process Technology Specially Designed fo Pan Jit International mosfet | | |
| 2 | PJX138L | N-Channel Enhancement Mode MOSFET PPJX138L
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current 160mA
Features
RDS(ON) , VGS@10V, ID@160mA<4.2Ω RDS(ON) , [email protected], ID@100mA<5Ω RDS(ON) , [email protected], ID@50mA<7Ω Advanced Trench Process Technology ESD Protected Specially Designed for Relay driver, Pan Jit International mosfet | | |
| 3 | PJX8603 | Complementary Enhancement Mode MOSFET PPJX8603
Complementary Enhancement Mode MOSFET – ESD Protected
Voltage 50 / -60V Current
SOT-563 0.36A / -0.2A
Features
Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/ Pan Jit International mosfet | | |
| 4 | PJX8802 | 20V N-Channel Enhancement Mode MOSFET PPJX8802
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
20 V
Current
0.7A
SOT-563
Features
RDS(ON) , VGS@4,5V, [email protected]<150mΩ RDS(ON) , [email protected], [email protected]<220mΩ RDS(ON) , [email protected], [email protected]<400mΩ Advanced Trench Process Technology Specially Designed fo Pan Jit International mosfet | | |
| 5 | PJX8803 | P-Channel Enhancement Mode MOSFET PPJX8803
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-0.6A
SOT-563
Features
RDS(ON) , [email protected], [email protected]<340mΩ RDS(ON) , [email protected], [email protected]<420mΩ RDS(ON) , [email protected], [email protected]<600mΩ Advanced Trench Process Technology Specially Desi Pan Jit International mosfet | | |
| 6 | PJX8804 | N-Channel Enhancement Mode MOSFET PPJX8804
30V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
30 V
Current
0.6A
SOT-563
Features
RDS(ON) , VGS@4,5V, [email protected]<220mΩ RDS(ON) , [email protected], [email protected]<290mΩ RDS(ON) , [email protected], [email protected]<600mΩ Advanced Trench Process Technology Specially Designed fo Pan Jit International mosfet | | |
| 7 | PJX8805 | P-Channel Enhancement Mode MOSFET PPJX8805
30V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-30 V Current
-0.5A
SOT-563
Features
RDS(ON) , [email protected], [email protected]<390mΩ RDS(ON) , [email protected], [email protected]<560mΩ RDS(ON) , [email protected], [email protected]<990mΩ Advanced Trench Process Technology Specially Desi Pan Jit International mosfet | |
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