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PDF PJQ2888 Data sheet ( Hoja de datos )

Número de pieza PJQ2888
Descripción P-Channel Enhancement Mode MOSFET
Fabricantes Pan Jit International　
Logotipo Pan Jit International Logotipo



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No Preview Available ! PJQ2888 Hoja de datos, Descripción, Manual

PPJQ2888
20V P-Channel Enhancement Mode MOSFET with TVS Diode
Voltage
-20 V Current
-1.5A
DFN2020-8L
Features
RDS(ON) , [email protected], [email protected]<325mΩ
RDS(ON) , [email protected], [email protected]<420mΩ
RDS(ON) , [email protected], [email protected]<600mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case : DFN2020-8L Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.00032 ounces, 0.0093 grams
Marking : 888
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-20
+8
-1.5
-6.0
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
November 16,2015-REV.03
Page 1

1 page




PJQ2888 pdf
PPJQ2888
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
Non-Repetitive
Fig.10 TVS Diode Surge Pulse Waveform Definition.
Fig.11 TVS Diode Peak Pulse Power vs. Pulse Time
November 16,2015-REV.03
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