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2SC5704 Datasheet PDF - CEL

Part Number 2SC5704
Description NPN SILICON RF TRANSISTOR
Manufacturers CEL 
Logo CEL Logo 



Preview ( 21 pages )
		
2SC5704 datasheet, circuit
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR
LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
FEATURES
Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz
6-pin lead-less minimold package
ORDERING INFORMATION
Part Number
NE662M16-A
2SC5704-A
NE662M16-T3-A
2SC5704-T3-A
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
15
3.3
1.5
35
115
150
65 to +150
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy substrate
Unit
V
V
V
mA
mW
C
C
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. P15364EJ1V0DS00 (1st edition)
Date Published April 2001 NS CP(K)

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2SC5704 equivalent
NE662M16 / 2SC5704
Data Sheet P15364EJ1V0DS
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Information Total 21 Pages
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