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2SB826 Datasheet PDF - ON Semiconductor

Part Number 2SB826
Description PNP / NPN Epitaxial Planar Silicon Transistors
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 



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2SB826 datasheet, circuit
2SB826 / 2SD1062
Ordering number : EN723I
2SB826 / 2SD1062 PNP / NPN Epitaxial Planar Silicon Transistors
50V / 12A Switching Applications
Applications
Relay drivers, high-speed inverters, converters, and other general high-current switching applications.
Features
Low-saturation collector-to-emitter voltage : VCE(sat)= --0.5V(PNP), 0.4V(NPN) max.
Wide ASO leading to high resistance to breakdown.
Specifications ( ) : 2SB826
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
Ratings
(--)60
(--)50
(--)6
(--)12
(--)15
1.75
40
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Ratings
min typ max
Unit
(--)0.1 mA
(--)0.1 mA
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SB826_2SD1062/D

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