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2SB1126 Datasheet PDF - ON Semiconductor

Part Number 2SB1126
Description PNP / NPN Epitaxial Planar Silicon Transistors
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 



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2SB1126 datasheet, circuit
2SB1126 / 2SD1626
Ordering number : EN1721B
2SB1126 / 2SD1626 PNP / NPN Epitaxial Planar Silicon Transistors
For Various Drivers
Applications
Relay drivers, hammer drivers, lamp drivers, motor drivers.
Features
High DC current gain (4000 or greater).
Large current capacity.
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications ( ) : 2SB1126
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on a ceramic board (250mm20.8mm)
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Marking 2SB1126 : BI
2SD1626 : DI
Symbol
ICBO
IEBO
Conditions
VCB=(--)40V, IE=0A
VEB=(--)8V, IC=0A
min
Ratings
(--)80
(--)50
(--)10
(--)1.5
(--)3
500
1.5
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Ratings
typ
max
Unit
(--)100 nA
(--)100 nA
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
2SB1126_2SD1626/D

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