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Número de pieza | AO3416 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Tuofeng Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO3416 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3416
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3416 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected.
Features
VDS (V) = 20V
ID = 6.0 A
RDS(ON) < 22mΩ (VGS = 4.5V)
RDS(ON) < 26mΩ (VGS = 2.5V)
RDS(ON) < 34mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
TA=25°C
Pulsed Drain Current B
ID
IDM
Power Dissipation A TA=25°C
Junction and Storage Temperature Range
PD
TJ, TSTG
Maximum
20
±8
6.0
30
1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AO3416.PDF ] |
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