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Número de pieza | 4835 | |
Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Tuofeng Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 4835 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Shenzhen Tuofeng Semiconductor Technology co., LTD
4835
P-Channel Enhancement Mode MOSFET
Features
Pin Description
• -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V
RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V
• Super High Density Cell Design
• Reliable and Rugged
• SO-8 Package
Applications
S1
S2
S3
G4
8D
7D
6D
5D
SO − 8
S SS
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
DD DD
P-Channel MOSFET
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID*
IDM
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous TA = 25°C
Maximum Drain Current – Pulsed
-30
V
±25
-8
A
-50
*Surface Mounted on FR4 Board, t ≤ 10 sec.
TF reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
1
1 page Shenzhen Tuofeng Semiconductor Technology co., LTD
4835
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
30
10
TJ=150°C
TJ=25°C
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V -Source-to-Drain Voltage (V )
SD
100
80
60
40
20
0
0.01
Single Pulse Power
0.1 1
Time (sec)
10
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle = 0.5
D= 0.2
D= 0.1
0.1
D= 0.05
D= 0.02
0.01
1E-4
1E-3
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
0.01 0.1
1
Square Wave Pulse Duration (sec)
10
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet 4835.PDF ] |
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