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PDF 4401 Data sheet ( Hoja de datos )
| Número de pieza | 4401 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4401
4401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4401 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
Features
VDS (V) = -30V
ID = -6.1 A
RDS(ON) < 46mΩ (VGS = -10V)
RDS(ON) < 61mΩ (VGS = -4.5V)
RDS(ON) < 117mΩ (VGS = -2.5V)
SOIC-8
Top View
SD
SD
SD
GD
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
PD
TJ, TSTG
Maximum
-30
±12
-6.1
-5.1
-60
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 4401.PDF ] | |
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