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Datasheet C2655 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | C2655 | NPN Transistor, 2SC2655 2SC2655
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2655
Power Amplifier Applications Power Switching Applications
Industrial Applications Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed s | Toshiba | data |
2 | C2655 | NPN Transistor, 2SC2655 UNISONIC TECHNOLOGIES CO., LTD 2SC2655
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
FEATURES
*Low saturation voltage VCE(SAT)= 0.5V (Max.) *High speed switching time tstg=1.0µs (Typ.)
NPN SILICON TRANSISTOR
1 TO-92NL
*Pb-free plating product number: 2SC2655L
ORDERING INFORMATION
Or | ETC | data |
C26 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | C2610 | NPN Transistor, 2SC2610 2SC2610
Silicon NPN Triple Diffused
Application
• High voltage amplifier • TV Video output
Outline
RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)
REJ03G0700-0200 (Previous ADE-208-1068)
Rev.2.00 Aug.10.2005
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
Item Collector t Renesas data | | |
2 | C2611 | NPN Transistor, 2SC2611 2SC2611
Silicon NPN Triple Diffused
Application
High voltage amplifier TV VIDEO output
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collec Hitachi Semiconductor data | | |
3 | C2611 | TRANSISTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
TO¡ª 92
C2611
FEATURES Power dissipation PCM : 0.75 Collector current ICM : 0.2
TRANSISTOR£¨NPN £©
W£¨ Tamb=25¡æ£© A
1. BASE
2.COLLECTOR
Collector-base voltage V(BR)CBO : 6 Jiangsu Changjiang Electronics transistor | | |
4 | C2611 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-251 Plastic-Encapsulated Transistors
C 2611
FEATURES Power dissipation PCM: 1 W (Tamb=25℃)
1. EMITTER 2. COLLECTOR 3. BASE
TRANSISTOR (NPN)
TO-251
Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage TRANSYS Electronics transistor | | |
5 | C2612 | NPN Transistor, 2SC2612 2SC2612
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1 23
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Hitachi Semiconductor data | | |
6 | C2615 | NPN Transistor, 2SC2615 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2615
DESCRIPTION ·With TO-247 package ·High voltage,high speed APPLICATIONS ·For high voltage,high speed and high power switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounti SavantIC data | | |
7 | C2621 | NPN Transistor, 2SC2621
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Número de pieza | Descripción | Fabricantes | |
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