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Datasheet IGB50N60T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IGB50N60T | Low Loss IGBT IGB50N60T
TRENCHSTOP™ Series
p
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C
Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans,
pumps and va |  Infineon | igbt |
IGB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IGB01N120H2 | IGBT, Insulated Gate Bipolar Transistor IGB01N120H2
HighSpeed 2-Technology
• Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners
• 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability -  Infineon Technologies igbt | | |
| 2 | IGB03N120H2 | HighSpeed 2-Technology IGP03N120H2, IGW03N120H2
HighSpeed 2-Technology
• Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel Infineon Technologies data | | |
| 3 | IGB10N60T | IGBT, Insulated Gate Bipolar Transistor IGB10N60T
TRENCHSTOP™ Series
p
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C
Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and va Infineon igbt | | |
| 4 | IGB15N60T | IGBT, Insulated Gate Bipolar Transistor IGB15N60T
TRENCHSTOP™ Series
q
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
C
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and Infineon Technologies igbt | | |
| 5 | IGB20N60H3 | IGBT, Insulated Gate Bipolar Transistor IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGB20N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
TRENCHSTOPTMtechnologyof Infineon igbt | | |
| 6 | IGB30N60H3 | IGBT, Insulated Gate Bipolar Transistor IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGB30N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IGB30N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
TRENCHSTOPTMtechnologyof Infineon igbt | | |
| 7 | IGB30N60T | IGBT, Insulated Gate Bipolar Transistor IGB30N60T
TRENCHSTOP™ Series
q
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s
Designed for frequency inverters for washing machines, fans, pumps and va Infineon igbt | |
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