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PDF IXA55I1200HJ Data sheet ( Hoja de datos )
| Número de pieza | IXA55I1200HJ | |
| Descripción | XPT IGBT | |
| Fabricantes | IXYS | |
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XPT IGBT
Single IGBT
Part number
IXA55I1200HJ
IXA55I1200HJ
VCES
I C25
VCE(sat)
=
=
=
preliminary
1200 V
84 A
1.8 V
(G) 1
(C) 2
(E) 3
Backside: isolated
Features / Advantages:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
Package: ISOPLUS247
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20090409
1 page  
IGBT
100
VGE = 15 V
80
IXA55I1200HJ
preliminary
100
80
VGE = 15 V
17 V
19 V
13 V
11 V
60
IC
[A] 40
20
TVJ = 25°C
TVJ = 125°C
60 TVJ = 125°C
IC
[A] 40
20
9V
0
012
VCE [V]
Fig. 1 Typ. output characteristics
3
100
80
IC 60
[A]
40
20 TVJ = 125°C
TVJ = 25°C
0
5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 3 Typ. tranfer characteristics
10
8
6
E
RG = 15
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
Eon
Eoff
[mJ] 4
2
0
0123
VCE [V]
Fig. 2 Typ. output characteristics
20
IC = 50 A
VCE = 600 V
15
4
VGE 10
[V]
5
0
0 40 80 120 160 200
QG [nC]
Fig. 4 Typ. turn-on gate charge
240
6.0
5.5 Eoff
E
5.0
[mJ]
4.5
Eon
IC = 50 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
0
0 20 40 60 80 100 120
IC [A]
Fig. 5 Typ. switching energy vs. collector current
4.0
12 16 20 24 28 32
RG [ ]
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20090409
5 Page | ||
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