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PDF STN3414 Data sheet ( Hoja de datos )

Número de pieza STN3414
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Semtron 
Logotipo Semtron Logotipo



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STN3414
DESCRIPTION
20V N-Channel Enhancement Mode MOSFET
FEATURE
The STN3414 is the N-Channel logic enhancement
mode power field effect transistor is produced using
high cell density. advanced trench technology to
provide excellent RDS(ON).low gate charge and
operation gate as 1.8V.
This device is suitable for use as a load switch or
other general applications.
STN3414S-TRG ROHS Compliant This is Halogen
Free
20V/5.0A, RDS(ON) =30m(typ.)@VGS =4.5V
20V/4.5A, RDS(ON) =42m(typ.)@VGS =2.5V
20V/3.8A, RDS(ON) =50m(typ.)@VGS =1.8V
Super high density cell design for extremely low
RDS(ON)
Exceptional on-resistance and Maximum DC
current capability
APPLICATIONS
Power Management in Note book
Portable Equipment
DSC
LCD Display inverter
Battery Powered System
PIN CONFIGURATION
Drain
Source
Gate
SOT-23L
Top View
PART NUMBER INFORMATION
ST N 3414 S - TR G
ab c d ef
D
G
S
a : Company name.
b : Channel type.
c : Product Serial number.
d : Package code
e : Handling code
f : Green product code
STN3414 Rev.2.0
Copyright © Semtron Microtech Corp.
1
www.semtron-micro.com

1 page




STN3414 pdf
STN3414
TYPICAL CHARACTERISTICS (25Unless Note)
Capacitance
800
700
600
500
400
300
200
100 Crss
0
04
Ciss
Coss
8 12 16
VDS-Drain Source Voltage(V)
20
Source Drain Diode Forward
10
TJ=150°C
1
TJ=25°C
0.1
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSD-Source Drain Voltage(V)
Power Dissipation
1.4
1.2
1
0.8
0.6
0.4
0.2 TA=25°C
0
0 20 40 60 80 100 120 140 160
TJ-Junction Temperature(°C)
Drain Current
7
6
5
4
3
2
1
TA=25°C
0
0 20 40 60 80 100 120 140 160
TJ-Junction Temperature(°C)
Thermal Transient Impedance
10
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01
1
0.1
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration(Sec)
100 1000
STN3414 Rev.2.0
Copyright © Semtron Microtech Corp.
5
www.semtron-micro.com

5 Page










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