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PDF STN2300A Data sheet ( Hoja de datos )

Número de pieza STN2300A
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Semtron 
Logotipo Semtron Logotipo



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STN2300A
DESCRIPTION
20V N-Channel Enhancement Mode MOSFET
FEATURE
The STN2300A is the N-Channel logic
enhancement mode power field effect transistor is
produced using high cell density. advanced trench
technology to provide excellent RDS(ON). low gate
charge and operation gate as 1.8V.
This device is suitable for use as a load switch or
other general applications.
STN2300AS-TRG ROHS Compliant This is
Halogen Free
20V/4.0A, RDS(ON) =22m(typ.)@VGS =4.5V
20V/3.0A, RDS(ON) =25m(typ.)@VGS =2.5V
20V/2.0A, RDS(ON) =33m(typ.)@VGS =1.8V
Super high density cell design for extremely low
Gate Charge
Exceptional on-resistance and Maximum DC
current capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Load Switch
PIN CONFIGURATION
Drain
Source
Gate
SOT-23
Top View
PART NUMBER INFORMATION
ST N 2300A S - TR G
ab c d ef
D
G
S
a : Company name.
b : Channel type.
c : Product Serial number.
d : Package code
e : Handling code
f : Green product code
STN2300A Rev.1.0
Copyright © Semtron Microtech Corp.
1
www.semtron-micro.com

1 page




STN2300A pdf
TYPICAL CHARACTERISTICS
Capacitance
1200
1000
800
600 Ciss
400
200
Crss
0
0
Coss
4
8
12 16
-VDS-Drain Source Voltage(V)
20
Power Dissipation
1.40
1.20
1.00
0.80
0.60
0.40
0.20 TA=25
0.00
0 20 40 60 80 100 120 140 160
TJ-Junction Temperature(°C)
STN2300A
Source Drain Diode Forward
1.00E+01
1.00E+00
1.00E-01
TA=150
1.00E-02
1.00E-03
TA=25
1.00E-04
1.00E-05
1.00E-06
0 0.2 0.4 0.6 0.8 1 1.2
VSD-Source Drain Voltage(V)
Drain Current
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140 160
TJ-Junction Temperature(°C)
Thermal Transient Impedance
10
Duty=0.5, 0.3, 0.1, 0.05, 0.02, 0.01
1
0.1
0.01
Single Pulse
0.001
0.0001
0.001
0.01 0.1 1 10
Square Wave Pulse Duration(Sec)
100 1000
STN2300A Rev.1.0
Copyright © Semtron Microtech Corp.
5
www.semtron-micro.com

5 Page










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