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IRF3710 Datasheet PDF - Inchange Semiconductor

Part Number IRF3710
Description N-Channel MOSFET Transistor
Manufacturers Inchange Semiconductor 
Logo Inchange Semiconductor Logo 

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IRF3710 datasheet, circuit
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF3710
·FEATURES
·Drain Current ID=57A@ TC=25
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 25mΩ(Max)
·DESCRITION
·Designed for high effciency switch mode power supplies,
Power factor correction and electronic lamp ballasts based
on half bridge.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
±20
V
V
ID Drain Current-Continuous
57 A
IDM Drain Current-Single Plused
230 A
PD Total Dissipation @TC=25
200 W
Tj Max. Operating Junction Temperature -55~175
Tstg Storage Temperature
-55~175
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.75
62
/W
/W
isc websitewww.iscsemi.cn
1
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www.fineprint.cn

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