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2SD2396 Datasheet PDF - JCET

Part Number 2SD2396
Description NPN Transistor
Manufacturers JCET 
Logo JCET Logo 



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2SD2396 datasheet, circuit
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD2396 TRANSISTOR (NPN)
TO – 220F
FEATURES
Available in TO-220 F package
Darling connection provides high dc current gain (hFE)
Large collector power dissipation
Low frequency and Power amplifier
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
1. BASE
123
2. COLLECTOR
3. EMITTER
Value
80
60
6
3
2
62.5
150
-55~+150
Unit
V
V
V
A
W
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltag
V(BR)CBO
IC=50μA, IE=0
80
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
60
Emitter-base breakdown voltage
V(BR)EBO
IE=50u A,IC=0
6
Collector cut-off current
ICBO VCB=80V,IE=0
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE*
VCE(sat)*
VEB=6V,IC=0
VCE=4V, IC=0.5A
IC=2A,IB=50mA
400
Base-emitter saturation voltage
VBE(sat)
IC=2A,IB=50mA
Collector output capacitance
Cob VCB=10V,IE=0, f=1MHz
Transition frequency
fT
*Pulse test: pulse width 300μs, duty cycle2.0%.
VCE=5V,IC=0.2A,f=10MHz
Typ Max
100
100
2000
0.8
1.5
55
40
Unit
V
V
V
μA
μA
V
V
pF
MHz
CLASSIFICATION OF hFE*
RANK
RANGE
H
400-800
J
600-1200
K
1000-2000
www.cj-elec.com
1 A-2,May,2016

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