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PDF CMS15I40A Data sheet ( Hoja de datos )
| Número de pieza | CMS15I40A | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Schottky Barrier Diode
CMS15I40A
1. Applications
• Secondary Rectification in Switching Regulators
• Reverse-Current Protection in Mobile Devices
2. Features
(1) Peak forward voltage: VFM = 0.49 V (max) @IFM = 1.5 A
(2) Average forward current: IF(AV) = 1.5 A
(3) Repetitive peak reverse voltage: VRRM = 40 V
(4) Small, thin package suitable for high-density board assembly
Toshiba Nickname: M-FLATTM
3. Packaging and Internal Circuit
CMS15I40A
1: Anode
2: Cathode
3-4E1S
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Repetitive peak reverse voltage
VRRM
40 V
Average forward current
IF(AV) (Note 1)
1.5
A
Non-repetitive peak forward surge current
IFSM (Note 2)
25
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tℓ = 126 , square wave (α = 180°), VR = 20 V
Note 2: f = 50 Hz, half-sine wave
Start of commercial production
2010-10
1 2014-04-14
Rev.1.0
1 page  
CMS15I40A
Fig. 10.6 rth(j-a) - t
Fig. 10.7 Cj - VR
Fig. 10.8 IR - Tj
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
5 2014-04-14
Rev.1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CMS15I40A.PDF ] | |
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