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PDF DMN30H4D0L Data sheet ( Hoja de datos )
| Número de pieza | DMN30H4D0L | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Product Summary
V(BR)DSS
300V
RDS(ON)
4Ω @ VGS = 10V
4Ω @ VGS = 4.5V
ID
TA = +25°C
0.25A
0.25A
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Description and Applications
DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
D
DMN30H4D0L
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208 e3
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
D
Top View
GS
Top View
Pin Configuration
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN30H4D0L-7
DMN30H4D0L-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
2H = Marking Code
2H
2H
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2013
A
Jan
1
Feb
2
DMN30H4D0L
Document number: DS36313 Rev. 2 - 2
2014
B
Mar
3
2015
C
Apr May
45
2016
D
Jun Jul
67
1 of 6
www.diodes.com
2017
E
Aug
8
Sep
9
2018
F
Oct
O
2019
G
Nov Dec
ND
February 2014
© Diodes Incorporated
1 page  
DMN30H4D0L
1 D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
RJA(t) = r(t) * RJA
RJA = 160°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
10
100 1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
BC
K
JF
H
D
G
K1
L
M
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 -
- 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
0°
8°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
Y
Z
C
XE
Dimensions
Z
X
Y
C
E
Value (in mm)
2.9
0.8
0.9
2.0
1.35
DMN30H4D0L
Document number: DS36313 Rev. 2 - 2
5 of 6
www.diodes.com
February 2014
© Diodes Incorporated
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DMN30H4D0L.PDF ] | |
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