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PDF BTA26-600A Data sheet ( Hoja de datos )
| Número de pieza | BTA26-600A | |
| Descripción | Triacs | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Triacs
isc Product Specification
BTA26-600A
FEATURES
·With TO-3P insulated package
·Suitables for general purpose where high surge current capability is required.
Application such as phase control
and static switching on inductive or
resistive load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM
VRRM
IT(RMS)
ITSM
Tj
Tstg
PG(AV)
Rth(j-c)
Rth(j-a)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
RMS on-state current (full sine wave)Tj=90℃
Non-repetitive peak on-state current tp=8.3ms
Operating junction temperature
Storage temperature
Average gate power dissipation(Tj=125℃)
Thermal resistance, junction to case
Thermal resistance, junction to ambient
MIN UNIT
600 V
600 V
25 A
260 A
125 ℃
-45~150 ℃
1W
1.5 ℃/W
50 ℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
IDRM
Repetitive peak reverse current
Repetitive peak off-state current
Ⅰ
VR=VRRM,
VR=VRRM, Tj=125℃
VD=VDRM,
VD=VDRM, Tj=125℃
IGT Gate trigger current
Ⅱ
VD=12V; RL= 33Ω
Ⅲ
Ⅳ
IH Holding current
IGT= 0.5A, Gate Open
VGT Gate trigger voltage all quadrant VD=12V; RL= 33Ω
VTM On-state voltage
IT= 35A; tp= 380μs
isc website：www.iscsemi.cn
MAX
0.01
6.0
0.01
6.0
100
100
100
150
100
1.5
1.7
UNIT
mA
mA
mA
mA
V
V
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