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BTA08-600A Datasheet PDF - Inchange Semiconductor

Part Number BTA08-600A
Description Triacs
Manufacturers Inchange Semiconductor 
Logo Inchange Semiconductor Logo 



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BTA08-600A datasheet, circuit
INCHANGE Semiconductor
isc Triacs
isc Product Specification
BTA08-600A
FEATURES
·With TO-220AB insulated package
·Suitables for general purpose applications where gate high sensitivity is
required. Application on 4Q such as phase control and static switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MIN UNIT
VDRM
VRRM
IT(RMS)
ITSM
Tj
Tstg
Rth(j-c)
Rth(j-a)
Repetitive peak off-state voltage
600 V
Repetitive peak reverse voltage
600 V
RMS on-state current (full sine wave)Tj=105
8
A
Non-repetitive peak on-state current tp=20ms
80
A
Operating junction temperature
110
Storage temperature
-45~150
Thermal resistance, junction to case
2.5 /W
Thermal resistance, junction to ambient
60 /W
ELECTRICAL CHARACTERISTICS (TC=25unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
IDRM
Repetitive peak reverse current
Repetitive peak off-state current
VR=VRRM,
VR=VRRM, Tj=110
VD=VDRM,
VD=VDRM, Tj=110
IGT Gate trigger current
VD=12V; RL= 30Ω
IH Holding current
IGT= 0.1A, Gate Open
VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω
VTM On-state voltage
IT= 11A; tp= 380μs
isc websitewww.iscsemi.cn
MAX
0.01
0.5
0.01
0.5
10
10
10
25
25
1.5
1.75
UNIT
mA
mA
mA
mA
V
V

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