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10N60 Datasheet PDF - Inchange Semiconductor

Part Number 10N60
Description N-Channel Mosfet Transistor
Manufacturers Inchange Semiconductor 
Logo Inchange Semiconductor Logo 

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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
10N60
·FEATURES
·Drain Current ID= 9.2A@ TC=25
·Drain Source Voltage-
: VDSS= 650V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.83Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
650
±30
V
V
ID Drain Current-Continuous
9.2 A
IDM Drain Current-Single Plused
36.8 A
PD Total Dissipation @TC=25
156 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.8 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn



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10N60 MOSFET Transistor


1. - 600V, 10A, N-ch MOSFET

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