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PDF AM5920N Data sheet ( Hoja de datos )
| Número de pieza | AM5920N | |
| Descripción | Dual N-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Analog Power | |
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Analog Power
AM5920N
Dual N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
20
rDS(on) m(Ω)
58 @ VGS = 4.5V
82 @ VGS = 2.5V
CF1206-8
Top View
D1
ID (A)
5.0
4.2
D2
• Low rDS(on) provides higher efficiency and S1 1
extends battery life
G1 2
• Low thermal impedance copper leadframe S2 3
CF1206-8 saves board space
G2 4
• Fast switching speed
• High performance trench technology
8
7
D1
D1
G1
G2
6
5
D2
D2
S1 S2
N-Channel MOSFET N-Channel MOSFET
ABSOLUTEMAXIMUMRATINGS (TA = 25 oCUNLESSOTHERWISE NOTED)
Parameter
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
20
±8
V
5.0
4.1 A
± 30
Continuous Source Current (Diode Conduction)a
IS 1.7 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
2.1
1.3
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RθJA
Maximum
62.5
80
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AM5920_A
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AM5920N.PDF ] | |
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