AM5932N Datasheet PDF - Analog Power
Part Number | AM5932N | |
Description | Dual N-Channel 30-V (D-S) MOSFET | |
Manufacturers | Analog Power | |
Logo | ||
There is a preview and AM5932N download ( pdf file ) link at the bottom of this page. Total 3 Pages |
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AM5932N
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 35 @ VGS = 10V
45 @ VGS = 4.5V
CF1206-8
Top View
D1
ID (A)
6.4
5.6
D2
• Low rDS(on) provides higher efficiency and S1 1
extends battery life
G1 2
• Low thermal impedance copper leadframe S2 3
DFN2x3 saves board space
G2 4
• Fast switching speed
• High performance trench technology
8 D1
7 D1 G1
G2
6
5
D2
D2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
IS
TA=25oC
TA=70oC
PD
TJ, Tstg
30
± 20
6.4
5.2
± 30
1.7
2.1
1.3
-55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RθJA
Maximum
62.5
80
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AM5932_A
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AM5932N electronic component. |
Information | Total 3 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ AM5932N.PDF Datasheet ] |
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